The purpose of this research was to suggest a junction-less strategy for vertical Tunnel Field Effect Transistor, which would increase the device's efficiency. In study, we examine similarities and differences between negative capacitor TFET vertically generated with source pocket heterostructure-based nanowire gate. And how channel transit impacts output qualities sub-100 nanometer sized devic...

A number of more recent discoveries in microbiology have made reliable identification nano-biomolecules and extensive analyses them necessary. variety proteins, including DNA, biotin-streptavidin, amino acids, as well many types bacteria viruses, must be found analyzed order to fully comprehend any odd behavior occurring inside live cells. Rapid testing detection are essential steps preventing ...

We present, here, advanced DFT-NEGF techniques that we have implemented in our ATOmistic MOdelling Solver, ATOMOS, to explore transport novel materials and devices particular van-der-Waals heterojunction transistors. describe methodologies using plane-wave DFT, followed by a Wannierization step, linear combination of atomic orbital leads an orthogonal non-orthogonal NEGF model, respectively. th...

In this paper, a novel vertically stacked silicon Nanosheet Tunnel Field Effect Transistor (NS-TFET) device scaled to gate length of 12 nm with Contact poly pitch (CPP) 48 is simulated. NS-TFET investigated for its electrostatics characteristics using technology computer-aided design (TCAD) simulator. The inter-band tunneling mechanism P-I-N layout has been incorporated in the nanosheet devices...

Using an idealized semianalytical model of charge transport for InAs-based tunneling FET, it is shown that the output and transfer characteristics can be accurately reproduced and could be used to develop compact models. The use of a mathematical approximation for the analytical solution of the surface potential is vital here to minimize the computation time. The 20-nm gate homojunction and 40-...

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...