In the last few years the downscaling of MOSFETs has caused problems due to the increasing short-channel effects (SCEs) in the sub 22 nm technology. The conventional MOS transistor has its physical limits due to the drift-diffusion current transport mechanism resulting in a minimal subthresholdslope of 60 . To fall below this physical limit a new device technology with an alternative carrier tr...

We introduce a new transistor architecture based on inter-band tunneling mechanism as a step towards exploring steep switching transistors for energy efficient logic applications. While there have been reports on tunnel transistors in Si, Ge material system and their alloys, we focus specifically on narrow gap compound semiconductor (CS) systems to develop tunnel transistors. We address the fol...

abstract: this paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (gnrfet). the results illustrate that the gnrfet under high temperature (ht-gnrfet) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay ...

This work examines the consequence of γ radioactivity on SOI-based Tunnel Field Effect Transistors & their use as radiation dosimeters. Extensive simulations have been carried out throughout study in order to examine creation e--h+ pairs oxide field predict device’s features from region where transistor operation around pinch-off voltage significant agglomeration area. It was found that pre...

The interplay between spin and charge in solids is currently among the most discussed topics in condensed matter physics. Such interplay gives rise to magneto-electric coupling, which in the case of solids was named magneto-electric effect, as predicted by Curie on the basis of symmetry considerations. This effect enables the manipulation of magnetization using electrical field or, conversely, ...