In this article, we report the studies of various device architectures of organic lightemitting devices (OLEDs) incorporating highly efficient blue-emitting and ambipolar carriertransport ter(9,9-diarylfluorene)s, and their influences on device characteristics. The device structures investigated include single-layer devices and multilayer heterostructure devices employing the terfluorene as one...

Selectively doped Gex Si , _ x lSi strained layer heterostructures have been grown in a single quantum well configuration on (OOl)-Si substrate using molecular beam epitaxy. The modulation doping effect has been observed inp-type structures only; although both nandp-type double heterostructures were grown. We have investigated the effects of: (i) alloy layer thickness (well width), (ii) doping ...

nanoribbons, [ 10 ] and most recently nanoplatelets (NPLs) [ 11 ] have been successfully synthesized. In these solution-processed quantum structures, an additional epitaxial growth of semiconductor shell around the starting semiconductor core leads to various architectures of nanocrystal heterostructures. By doing so, physical properties can be elegantly modifi ed with precisely controlling dis...

CHOQIJETTE, KD., CANEAII, c.. and F I O R ~ Z , L.T.: ‘Low threshold buried heterostructure vertical cavity surfxe-emitting laser’. Conf. Lascrs and Electro-optics, Tcch. Dig. Scr., 1993, Vol. 11, pp. 136138 YOO, n.-s., CHU, KY., PARK, II.-H., LIE. H.G., and LEE, J . : ‘Transversc mode charactetistics of vertical-cavity surface-emitting lasers buried in aniorphous GaAs antiguide layer’, IEEE J ...

We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor-liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and diameter of 1 to 10 μm and 100 nm, respectively. The vertical GaN/InGaN coaxial heterostructure nan...

We fabricated a graphene/few-layer InSe heterostructure photo-detector and solved a recurrent materials problem concerning degradation of ultra-thin atomic layers in air. This heterostructure has a largely enhanced performance explained by its fundamentally different mode of functioning with respect to the corresponding device without graphene.

Augmenting fluorescence intensity is of vital importance to the development of chemical and biochemical sensing, imaging and miniature light sources. Here we report an unprecedented fluorescence enhancement with a novel architecture of multilayer three-dimensional colloidal photonic crystals self-assembled from polystyrene spheres. The new technique uses a double heterostructure, which comprise...

Graphene/hexagonal boron nitride (h-BN) monolayer in-plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in-plane epitaxy of graphene/h-BN heterostructure is demonstrated on Cu-Ni substrates. The introduction of nick...

As important third-generation semiconductors, wurtzite III nitrides have strong spontaneous and piezoelectric polarization effects. They can be used to construct multifunctional polar heterojunctions or quantum structures with other emerging two-dimensional (2D) semiconductors. Here, we investigate the effect of GaN on interfacial charge transfer electronic properties GaN/MoS2 by first-principl...