نتایج جستجو برای: unity gain frequency ft
تعداد نتایج: 669875 فیلتر نتایج به سال:
Fig. 1. Cross-section of self-aligned base-emitter junction from Teledyne 500nm HBT process [6] InP-based transistor technologies, both high electron mobility transistors (HEMTs) and double heterojunction bipolar transistors (DHBTs), have demonstrated the highest reported transistor RF figures-of-merit. Both device technologies have been reported with current gain cutoff frequencies (ft) in exc...
Impaired glucose tolerance has several adverse effects on growing fetus. In this study we evaluated the effect of excessive weight gain during pregnancy on the risk of glucose intolerance in pregnant women. A case-control study was conducted through which the glucose tolerance status after 100 gram oral glucose intake was compared between 60 pregnant women with maximum 10 weeks of gestation and...
We study the effects of a high-frequency (HF) signal on the response of a noisy bistable system to a low-frequency subthreshold sinusoidal signal. We show that, by conveniently choosing the ratio of the amplitude of the HF signal to its frequency, stochastic resonance gains greater than unity can be measured at the low-frequency value. Thus, the addition of the HF signal can entail an improveme...
We present simulations results and experimental evidence of radiation energy extraction e$ciency enhancement by use of pre-bunching in a free electron maser (FEM). This enhancement is attained by locking the oscillator to operate at a distinct resonator eigen frequency (longitudinal mode) which is di!erent from the maximum-gain frequency of the free running oscillator. The mode selection is acc...
A novel adaptive FIR filter for the estimation of a single-tone sinusoid corrupted by additive noise is described. The filter is based on an offline optimization procedure which, for a given notch frequency, computes the filter coefficients such that the frequency response is unity at that frequency and a weighted noise gain is minimized. A set of such coefficients is obtained for notch frequen...
In sampling mode, S, and S, are on, the voltage across C,,tracks Vi,,, and 4 is configured as a unity-gain amplifier. In transition to the hold mode, S, and S, turn off and C,maintains a unity-gain loop around 4. In this topology, both charge injection of S, and S, and hold-mode droop appear as a common-mode voltage at the inputs of 4, allowing smaller values for C, and C , than in a single-en...
A new concept of directed-divergence function of type fi is introduced in this paper• This concept is used in obtaining a directed-divergence of type fl which generalizes Kullback's directed-divergence and has a relation with R6nyi's information-gain of order ft. This relation can be used to give another characterization of information-gain of order ft. A characterization theorem for the direct...
The paper introduces a novel time-frequency linearly constrained minimum variance (LCMV), also known as Capon method, for the direction of arrival (DOA) estimation of nonstationary signals impinging on a multisensor array receiver. The results are compared with the conventional Capon method of DOA estimation technique. In Capon method, the weights are chosen to minimize the weighted array power...
Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser
In order to further improve the high-frequency characteristics of highly scaled SiGe HBT and consider compatibility with mature CMOS technology, a new structure is proposed by introducing an embedded Si1−yGey stress raiser produce additional uniaxial in bulk collector region. The energy-band configuration multi-layered emitter has been investigated estimation strain effect, then influence on el...
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