Epitaxial GaAs layers were grown using the close-space vapour transport. From deep level transient spectroscopy measurements, the native EL2 donor has been observed in all of the layers with deposition temperature-dependent concentration. On the GaAs samples, also performed are photoluminescence experiments in the temperature range 10–300 K. Two peculiar features were revealed: (i) the radiativ...

This article discusses the growth of silicon and related materials using ultra-high vacuum chemical vapor deposition (UHV/CVD). This growth technique is well suited for deposition of strained epitaxial layers and also layers with metastable concentrations of impurities such as boron and carbon. In UHV/CVD, growth kinetics and the incorporation of various atoms other than silicon are determined ...

Articles you may be interested in Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires Appl. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy Polarity driven ...

The influence of various deposition conditions (deposition temperature, partial oxygen pressure and solution composition) to the growth of ferroelectric PbTiO3 (PTO) films by pulsed liquid injection metalorganic chemical vapour deposition (MOCVD) was examined. Films were grown on LaAlO3 (001), SrTiO3 (001) and sapphire (R-plane) substrates. Pb(thd)2 and Ti(O i Pr)2(thd)2 (thd = 2,2,6,6-tetramet...

GaInAsSb is a promising material for mid-infrared devices such as lasers and detectors because it is a direct band gap material with large radiative coefficient and a cut-off wavelength that can be varied across the mid-infrared (from 1.7 to 4.9 μm) while remaining lattice matched to GaSb. On the other hand, the potential of the alloy is hampered by predicted ranges of concentration where the c...

While metal is the most common conducting constituent element in the fabrication of metamaterials, graphene provides another useful building block, that is, a truly two-dimensional conducting sheet whose conductivity can be controlled by doping. Here we report the experimental realization of a multilayer structure of alternating graphene and Al2O3 layers, a structure similar to the metal-dielec...

Samples of Fe-Al-C alloys of varying composition were synthesized under high pressures and temperatures. From X-ray analysis data, only K-phase with usual for it average parameter of elemental lattice cell, a = 0.376 nm, carbide Fe3C and cubic diamond reflexes were present before and after cooling to the temperature of liquid nitrogen.Calculations were made of the parameters of unit cells, the ...