In the present work, a new vertical cavity surface emitting laser (VCSEL) structure employing combined oxide layer and single defect photonic crystal index guiding layer has been investigated for L-band optical fiber application. The basic design goal was to obtain photonic crystal VCSEL (PhC VCSEL) with the high power, high slop efficiency and low threshold that operate at 1.55-1.6μm wavelengt...

We report single-mode lasing in subwavelength GaAs disks under optical pumping. The disks are fabricated by standard photolithography and two steps of wet chemical etching. The simple fabrication method can produce submicron disks with good circularity, smooth boundary, and vertical sidewalls. The smallest lasing disks have a diameter of 627 nm and thickness of 265 nm. The ratio of the disk dia...

Recent progress and achievements in creating single fundamental mode vertical cavity lasers with the technique of etching a 2dimensional pattern of photonic crystal holes into the top distributed Bragg reflector are described. A simulation method for the design of single mode lasers is described, along with accuracy and limitations in predicting modal properties in these devices. Progress in im...

A novel etch front roughening phenomenon has been observed in the plasma etching of Si(100). The morphology exhibits a network structure with holes which coarsen with etech time, and a wavelength selection with a characteristic spatial frequency decreasing with time. The average local slope is invariant while the vertical roughness grows as w , t , with b ­ 0.91 6 0.03. We suggest a nonlocal La...

The design of a combined scanning electrochemical microscope-quartz crystal microbalance (SECM-QCM) with separate potential control of the tip and substrate is described. Both lateral and vertical tip movements near the substrate affect the QCM resonant frequency because of perturbations of the longitudinal and shear waves of the quartz crystal (QC) acoustic wave sensor. The SECM-QCM was used t...

Vertical arrays of sealed nanofluidic channels, in which both cross-sectional dimensions are controllable down to 10 nm, were fabricated by selective side etching of a SiGe heterostructure comprised of layers of alternating Ge fractions. Capillary filling of these nanochannel arrays with fluorescent dye solutions was investigated using a confocal microscope. The feasibility of using nanochannel...

In this paper we present a tilting micro mirror with a large mirror surface of up to 2.5 mm x 1.0 mm and a large rotation angle of +/10° as needed for optical projection displays. The mirror is driven by vertical comb-drive actuators which are realized by a combination of deep reactive ion etching (DRIE) and a buried mask to provide selfalignment of the stator and rotor fingers in a silicon on ...

The use of a high-contrast grating (HCG) as the top mirror in a vertical-cavity surface-emitting laser (VCSEL) allows for setting the resonance wavelength by the grating parameters in a post-epitaxial growth fabrication process. Using this technique, we demonstrate electrically driven multi-wavelength VCSEL arrays at ~980 nm wavelength. The VCSELs are GaAs-based and the suspended GaAs HCGs were...

The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...

This paper presents the design, fabrication and characterization of 4H-SiC trenched-andimplanted vertical JFETs (TI-VJFETs) [1]. The design of TI-VJFETs with active areas of 9.38×10 -2 mm 2 and 2.03mm 2 and different vertical channel openings is presented based on a blocking layer of 9.4μm, doped to n=7x10 15 cm -3 . Highly vertical channel defined by trench etching and angled implantation of A...