In this paper, a model for the forward voltage drop in 4H-SiC trench IGBT is developed. The analytical based on MOSFET and hole-carrier concentration profile N-drift region conventional IGBT. Moreover, an on-state validated using 2D numerical simulation, simulation results demonstrate that there good agreement between ATLAS data analytic solutions.

A novel approach to the dynamic supply current sensing based on the measurement of voltage drop across a parasitic resistance of the supply voltage metal line is presented. Then, auto-zero technique for voltage comparator offset cancellation, which provides very accurate and sensitive low voltage measurement is proposed. Therefore, we may use this as a current monitor for dynamic current testin...

When large currents are passed through a high-quality quantized Hall resistance device the voltage drop along the device is observed to assume discrete, quantized states if the voltage is plotted versus the magnetic field. These quantized dissipative voltage states are interpreted as occurring when electrons are excited to higher Landau levels and then return to the original Landau level. The q...

Study and analysis of a proposed high-voltage high current switching n-p-n silicon germanium single-heterojunction bipolar transistor (SHBT) is performed using 2D MEDICI device simulator. A theoretical formulation is provided to substantiate the simulation results obtained regarding quasi-saturation phenomenon in bipolar transistors. Comparison with the conventional high-voltage current switchi...

The minimum supply voltage €or a typical switched-current (SI) cell can be shown to be greater than 2 v ~ + 2VDssat approximately due to the fact that an additional voltage drop is required for the MOS switch, which is connected to the gate of the memory transistor. Thus, a minimum supply voltage of 1.5 V is usually required in a standard CMOS process. In this paper, an active switching scheme ...

Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby influencing its conductance. Here we investigate the impact of electrostatic gating in nanojunctions between graphene electrodes operating at finite bias. U...

A current-voltage composite controller for an arc suppression inverter is designed. The current and voltage at the fault point are reduced by injecting regulating neutral to completely eliminate risk of fire overvoltage caused a single-line-to-ground arc. cascaded used, effects ground parameter measurement, line impedance drop, harmonic coil on control, control methods analysed compared. Finall...

We show that at low velocities the dynamics of a contact line of a water drop moving over a Teflon-like surface under ac electrowetting must be described as stick-slip motion, rather than one continuous movement. At high velocities we observe a transition to a slipping regime. In the slipping regime the observed dependence of the contact angle is well described by a linearization of both the hy...