,4bsfrad —The stability of both resistor-load (R-load) and full-(2MOS SRAM cells is investigated analytically as well as by simulation. Explicit analytic expressions for the static-noise margin (SNM) as a function of device parameters and supply voltage are derived. The expressions are useful in predicting tbe effect of parameter changes on the stability as well as in optimizing the design of S...

A solution to the stability of capacitor-less low-dropout regulators with a 4pF Miller capacitor in Multi-level current amplifier is proposed. With the Miller compensation, a more than 50°phase margin is guaranteed in full load. An extra fast transient circuit is adopted to reduce stable time and peak voltage. When the load changes from light to heavy, the peak voltage is 40mV and chip quiescen...

The risk-based assessment is a new approach to the voltage stability assessment in power systems. Under several uncertainties, the security risk of static voltage stability with the consideration of wind power can be evaluated. In this paper, we first build a probabilistic forecast model for wind power generation based on real historical data. Furthermore, we propose a new probability voltage s...

The paper presents a method for finding out the weakest bus based on reactive power sensitivity index for a multibus real system. The Voltage Stability Margin (VSM) and change in voltage has also been calculated for the verification for with and without compensation. These techniques are tested on the 400 KV WBSEB system proposed in the 9th plan and results are given to prove the effectiveness ...

Speed, power consumption and area, are some of the most important factors of concern in modern day memory design. As we move towards Deep Sub-Micron Technologies, the problems of leakage current, noise and cell stability due to physical parameter variation becomes more pronounced. In this paper we have designed an 8T Read Decoupled Dual Port SRAM Cell with Dual Threshold Voltage and characteriz...

Recent day power system networks are having high risks of voltage instability problems and several network blackouts have been reported. This phenomenon tends to occur from lack of reactive power supports under heavily stressed operating conditions caused by increased load demand and the fast developing deregulation of power systems across the world. This paper proposes an application of Shuffl...

This paper presents design options for 3D SRAM cells to enable ultra-high density 3D SRAM based on monolithic 3D integration. Our target technology offers one tier of NMOS devices, another for PMOS devices, and nano-scale inter-tier vias. Choosing the most compact 22nm 2D SRAM as our design baseline, we first achieve a 33% footprint area reduction by simply splitting the NMOS and PMOS devices i...