نتایج جستجو برای: آسیب seu

تعداد نتایج: 37468  

Journal: :Revista Brasileira de Pesquisa em Turismo 2020

Journal: :Boletim IG-USP. Publicação Especial 1993

Journal: :EURASIP J. Wireless Comm. and Networking 2012
Wenhui Yang Zhen Gao Xiang Chen Ming Zhao Jing Wang

With the development of satellite communications, on-board processing (OBP) obtains more and more attentions due to the increased efficiency and performance. However, the large amounts of digital circuits in the OBP transponders are sensitive to the high-energy particles in space radiation environments, which may cause various kinds of single event effect. Among these effects, single event upse...

Journal: :Língua e Literatura 1999

Journal: :Terra Brasilis 2013

Journal: :The Journal of Experimental Medicine 1995
D L Donermeyer K W Beisel P M Allen S C Smith

Immune interactions in the heart were studied using a murine model of myosin-induced autoimmune myocarditis. A T cell hybridoma specific for mouse cardiac myosin was generated from A/J mice and used to demonstrate that endogenous myosin/I-Ak complexes are constitutively expressed on antigen-presenting cells in the heart. This T cell hybridoma, Seu.5, was used as a functional probe to identify a...

2007
V. Pouget A. Douin D. Lewis P. Fouillat G. Foucard P. Peronnard V. Maingot J. B. Ferron L. Anghel R. Leveugle R. Velazco

This paper presents the development of a set of tools and the associated methodology for performing pulsed laser fault injection experiments in SRAM-based FPGAs. The new platform allows reliable evaluation of the impact of SEU and MBU in the configuration memory.

2013
Jun FURUTA Kazutoshi KOBAYASHI Hidetoshi ONODERA

We measured neutron-induced SEUs (Single Event Upsets) and MCUs (Multiple Cell Upsets) on FFs in a 65 nm bulk CMOS process. Measurement results show that maximum MCU / SEU ratio is 30.6% and is exponentially decreased by the distance between latches on FFs.

2013
K. O. Petrosyants I. A. Kharitonov

Single event upsets (SEU) produced by heavy ions in SOI CMOS SRAM cells were simulated using a mixed-mode approach, that is, two-dimensional semiconductor device simulation by TCAD tool coupled with circuit SPICE simulator. The effects of parasitic BJT and particle strike position on the SOI CMOS SRAM cells upset for transistor length scaling from 0.25 um to 65nm are presented.

2000
Larry D. Edmonds

Many papers have presented models for estimating proton single event upset (SEU) cross sections from heavy-ion test data, but all rigorous treatments to date are based on the sensitive volume (SV) model for charge collection. Computer simulations have already shown that, excluding devices utilizing physical boundaries for isolation, there is no well-defined SV. A more versatile description of c...

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