Power density in active devices is increasing according to the demands of transistor users. Applications in commercial wireless, avionics, broadcast, industrial, and medical systems are pushing the envelope for solid-state power, with growing requirements for higher output power levels from fewer output-stage devices. At Freescale Semiconductor, supplying high-performance radio frequency (RF) a...

Modern medical microwave diagnostic equipment requires the use of solutions related to compactness developed devices and high performance. It is possible achieve set conditions with a modern semiconductor component base based on A3B5 compounds. The paper presents designs main control elements signal as part radiothermometer monolithic Al-GaN/GaN/SiC HEMT SPDT transistor switch MIC LNA basis pHE...

In this study, we have fabricated nano-scaled oxide structures on GaAs substrates that are doped in different conductivity types of p- and n-types and plane orientations of GaAs(100) and GaAs(711), respectively, using an atomic force microscopy (AFM) tip-induced local oxidation method. The AFM-induced GaAs oxide patterns were obtained by varying applied bias from approximately 5 V to approximat...

Nanohole formation on an AlAs/GaAs superlattice gives insight to both the "drilling" effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets "drill" through the AlAs layer at a much slower rate than through GaAs due ...

Gallium arsenide (GaAs) based microaccelerometers are being developed for guidance and navigation subsystems, and various microsensor systems. The microaccelerometer is a microelectromechanical system (MEMS) micromachined on top of GaAs substrate or GaAs integrated cirwits. The MEMS accelerometer is integrated on the same chip as the GaAs readout circuit and the GaAs analog to digital converter...