Current advancement in electronic devices is so rapid that silicon, the semiconductor material most widely used today, needs to be replaced in some of the fields. Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at elevated temperature, and in harsh environments. Hexagonal polytypes of SiC, su...

in the present study we focused on the electronic and structural properties of na and mg adsorption on the surface of the (6, 6) armchair sicnts. the adsorption energy (eads), band gap energy (eg), partial density of state (pdos), chemical potential (μ), global hardness (η), electrophilicity index (ω), global softness (s), work function values (φ) and work function change (δφ) are calculated by...

We construct the set of all general (i.e. not necessarily rank 1) symmetric informationally complete (SIC) positive operator valued measures (POVMs), and thereby show that SIC-POVMs that are not necessarily rank 1 exist in any finite dimension d. In particular, we show that any orthonormal basis of a real vector space of dimension d 2 − 1 corresponds to some general SIC POVM and vice versa. Our...

Ceramic matrix composites (CMC’s), particularly silicon carbide (SiC) fiber-reinforced SiC-matrix (SiC/SiC) composites, have been studied for advanced nuclear energy applications for more than a decade. The perceived potentials for advanced SiC/SiC composites include the ability to operate at temperature regimes much higher than heat-resistant alloys, the inherent low inducedactivation nuclear ...

Silicon Carbide (SiC) is believed to be a revolutionary semiconductor material for power devices of the future; many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent develop‐ ments of SiC power devices are discussed. The first part is focused o...