نتایج جستجو برای: 4t
تعداد نتایج: 808 فیلتر نتایج به سال:
Narrow-band gap (NBG) Sn–Pb perovskites with band gaps of ?1.2 eV, which correspond to a broad photon absorption range up ?1033 nm, are highly promising candidates for bottom solar cells in all-perovskite tandem photovoltaics. To exploit their potential, avoiding optical losses the top layer stacks configuration is essential. This study addresses this challenge two ways (1) removing hole-transp...
The automorphism group of any Hadamard matrix of order n acts on the set of cell co-ordinates {(i, j) | i, j = 1, 2, . . . , n}. Let f(n) denote the least number of cell orbits amongst all the Hadamard matrices of order n. This paper describes Hadamard matrices with a small number of cellwise orbits, and in particular proves some results about the function f . We show that, except possibly for ...
found between metabolites as a function of B0 are displayed with linear lines of best fit. Interacting metabolites are shown together in the legend. Table 1. A summary of all the significant correlations (p<0.01) found at each B0 and SNR. Figure 1. Example spectra for each B0 with SNR= 360 (7T), 206 (4T), 154 (3T), and 77 (1.5T) The influence of the external magnetic field strength on correlati...
The cDNA fer the eh]oroplast-located homolog of bacterial RecA protein, designated rec,4=,4T, was placed.in a plasmid appropriate for in vitro transcription and translation. Translation with 35S-labe]ed Met permitted demonstration of uptake of the protein product into isolated pea chloroplasts, and processing to a mature size. Preliminary eyidence for the first amino acid was estimated from res...
Large sets of orthogonal arrays (LOA) have been used to construct resilient functions and zigzag functions by D. R. Stinson. In this paper, a construction of pandiagonal t-multimagic squares of order n (PMS(n, t)) based on a special kind of LOA called quadruple LOA is presented. As its application, it is shown that there exists a PMS(q, t) for all odd prime power q ≥ 4t− 1 with t ≥ 2, which pro...
France We study the properties of a quarter-filled system of electrons on a square lattice interacting through a local repulsion U and a nearest-neighbour repulsion V in the limit V = +∞. We identify the ground-state for U large enough and show that domain walls appear below a critical value U c = 4t/π. We argue that this corresponds to a metal-insulator transition due to Mott localization.
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید