A novel palladium promoted Ag/Al2O3 catalyst (denoted Ag-Pd/Al2O3) has been developed for the selective catalytic reduction of NO by C3H6. The Ag-Pd/Al2O3 shows a higher NOx conversion than Ag/Al2O3, especially at the temperatures ranging from 300 to 450 ◦C. The addition of a small amount of Pd (0.01 wt.%) to Ag/Al2O3 is considered to be favorable for the partial oxidation of C3H6. In situ diff...

The mechanical behavior of precipitation-strengthened Al-0.18 wt.% Sc alloys containing 30 vol.% Al2O3 dispersoids is studied at 25, 300 and 350°C. The effect of Al3Sc precipitate size is studied by varying aging treatments. Microhardness measurements show that both populations of particles (nanometer-sized Al3Sc precipitates and submicron-sized Al2O3 dispersoids) contribute to strength at ambi...

Atomic layer deposition (ALD) has been employed to modify the surface of high voltage cathode LiNi0.5Mn1.5O4 by coating ultrathin Al2O3 layer on the electrodes. The ultrathin layer of Al2O3 can suppress the undesirable reactions during cycling, while maintaining the electron and ion conductivity of the electrode. The ALD Al2O3 coated LiNi0.5Mn1.5O4 showed remarkable improvement over bare LiNi0....

Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al(0.75)Ga(0.25)N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuat...

The short lifetime of photogenerated charge carriers of hematite (α-Fe2O3) thin films strongly hindered the PEC performances. Herein, α-Fe2O3 thin films with surface nanowire were synthesized by electrodeposition and post annealing method for photoelectrocatalytic (PEC) water splitting. The thickness of the α-Fe2O3 films can be precisely controlled by adjusting the duration of the electrodeposi...

ALD Al2O3/GaAs and Al2O3/In0.2Ga0.8As MOS and source-drain implanted MOSFET structure were fabricated and characterized by capacitance-voltage (CV) and current-voltage (I-V) measurements. It is shown that, after high-temperature anneal, the MOS leakage current density of the thinner (16nm) film is much higher than that of the thicker (30nm) film. The highquality Al2O3 (30nm)/In0.2Ga0.8As interf...

The development of perovskite solar cells (PSCs) with low recombination losses, at processing temperatures is an area growing research interest as it enables compatibility roll-to-roll on flexible substrates well tandem cells. inverted or p-i-n device architecture has emerged the most promising PSC configuration due to possibility using temperature processable organic hole transport layers and ...

We report on the suitability of water-soluble non-polymeric electrospun cyclodextrin (CD) nanofiber templates by using atomic layer deposition (ALD) to yield metal oxide tubes. To demonstrate this, watersoluble electrospun CD nanofibers were chosen as template to produce metal oxide tubes where we have tested two examples of ALD coatings, namely, Al2O3 and ZnO. After the ALD coating on the CD n...

The interactions between 1-butyl-3-methylimidazolium trifluoromethanesulfonate ([BMIM][TFS]) and nano-Al2O3 are studied using high-pressure infrared spectroscopy. The thickness of the [BMIM][TFS] interfacial layer on the aluminum oxide are adjusted by controlling the number of washes with ethanol. In contrast to the results obtained under ambient pressure, local structures of both the cations a...

This paper describes the results of room temperature joining of TiO2 / SiO2 IRF by sputter deposition with a special emphasis of improvement of adherence at the interface. This multilayer system is designed to shield the infrared energy of solar spectrum by interference reflection. The abrasion resistance of the multilayer stacks was also estimated by the Haze value after the Taber abrasion tes...