Electron charging and discharging were produced in metal-insulator-semiconductor structures containing amorphous silicon quantum dots ~a-Si QDs! by increasing the applied voltage in a stepwise fashion without changing its sign. The metal-insulator-semiconductor structure was fabricated using an insulating silicon nitride film containing a-Si QDs by plasma-enhanced chemical vapor deposition. Thi...

ZnO is a wide bandgap semiconductor that has many potential applications including solar cell electrodes, transparent thin film transistors and gas/biological sensors. Since the surfaces of ZnO materials have no amorphous or oxidized layers, they are very environmentally sensitive, making control of their semiconductor properties challenging. In particular, the electronic properties of ZnO nano...

We are familiar with large highly-ordered single crystals, such as those used in the semiconductor industry. There the crystalline ordering in the silicon crystals extends for billions and more lattice spacings. As a result, X-ray diffraction (XRD) patterns of these crystals have sharp Bragg peaks. We are also familiar with liquids, where the molecules have a local structure that is very differ...

The interference enhanced Raman scattering (IERS) configuration is used to study the initial interfacial interactions of thin films of Pd or Pt on hydrogenated amorphous silicon (a-Si:H). Sharp spectral features are observed in the Raman spectrum of as-deposited Pd on a-Si:H which are attributed to crystalline P3,Si. In contrast, for as-deposited Pt on a-Si:H, broad spectral features are observ...

The nascent field of semiconductor optical fibers is attracting increased interest as a means to exploit the optoelectronic functionality of the semiconductor materials directly within the fiber geometry [1]. Compared to their planar counterparts, this new class of waveguide retains many of the advantageous properties of the fiber platforms such as robustness, flexibility, cylindrical symmetry,...

It has been suggested that high-density amorphous (HDA) ice is a structurally arrested form of high-density liquid (HDL) water, while low-density amorphous ice is a structurally arrested form of low-density liquid (LDL) water. Recent experiments and simulations have been interpreted to support the possibility of a second distinct high-density structural state, named very high-density amorphous ...

The results on measuring the I-V characteristics of metal-semiconductor transition within Ti(200nm)|Si@O@Al(179nm)|Ti(203nm) test structure are presented. basis Si@O@Al nanocomposite is a solid solution Al in amorphous silicon a-Si(Al). I–V has form characteristic reverse-biased ohmic contact between metal and p-type semiconductor, which implies that a-Si(Al) substitutional solution. It shown f...

Amorphous oxide semiconductors (AOSs) have been widely applied for state‐of‐the‐art flat‐panel display as a thin‐film transistor (TFT) since 2012. Besides, AOSs studied not only TFT but also other electronic devices such sensor, diode, transport layer, memory, and so on. To realize those next‐generation electronics using AOS material, it is important to understand the defect state in material. ...