Transport experiments in strong magnetic fields show a variety of fascinating phenomena like the quantum Hall effect, weak localization or the giant magnetoresistance. Often they originate from the atomic-scale structure inaccessible to macroscopic magnetotransport experiments. To connect spatial information with transport properties, various advanced scanning probe methods have been developed....

Anastasia Varlet,1, ∗ Ming-Hao Liu (劉明豪),2 Dominik Bischoff,1 Pauline Simonet,1 Takashi Taniguchi,3 Kenji Watanabe,3 Klaus Richter,2 Thomas Ihn,1 and Klaus Ensslin1 1Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland 2Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg, Germany 3Advanced Materials Laboratory, National Institute for Materials Science, 1...

• We review recent progress in the computational study of graphene as an RO

Graphene sheets offer extraordinary electronic, thermal and mechanical properties and are expected to find a variety of applications. A prerequisite for exploiting most proposed applications for graphene is the availability of processable graphene sheets in large quantities. The direct dispersion of hydrophobic graphite or graphene sheets in water without the assistance of dispersing agents has...

Our measurement results have shown that bilayer graphene exhibits an unexpected sharp transition of the resistance value in the temperature region 200~250 K. We argue that this behavior originates from the interlayer ripple scattering effect between the top and bottom ripple graphene layer. The inter-scattering can mimic the Coulomb scattering but is strongly dependent on temperature. The obser...

We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singul...

Graphene is considered to be a promising candidate for future nanoelectronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect transistors (FETs) cannot be turned off effectively due to the absence of a band gap, leading to an on/off current ratio typically around 5 in top-gated graphene FETs. On the other hand, theoretical investigations and optical measur...

The interaction of graphene with metal is of critical importance for further optimization of the growth and transfer processes to achieve productive graphene. Here we report first-principles calculations with van der Waals corrections to address in-plane orientation effects on the geometric structure and electronic properties of monolayer and bilayer graphene on a Ru(0001) surface. We find that...

We report a new, simple, hydrazine-free, high-yield method for producing single-layer graphene sheets. Graphene sheets were formed from graphite oxide by reduction with simple deionized water at 95 °C under atmospheric pressure. Over 65% of the sheets are single graphene layers; the average sheet diameter is 300 nm. We speculate that dehydration of graphene oxide is the main mechanism for oxyge...