Simulation results on a novel extended p dual source SOI MOSFET are reported. It is shown that the presence of the extended p region on the source side, which can be fabricated using the post-low-energy implanting selective epitaxy (PLISE), significantly suppresses the parasitic bipolar transistor action resulting in a large improvement in the breakdown voltage. Our results show that when the l...

In this paper, a crown-shaped trench gate formed by sidewall spacer in insulated bipolar transistors (IGBT) is proposed to improve breakdown voltage. When added bottom corners, the electric field distributed surface of and decreased 48% peak value field. Thus, IGBT improved 5% Another study an additional oxide layer for corners voltage similar IGBT. Previous studies have shown degradation other...

In this paper, an original CMOS on-chip high voltage generator has been proposed. Having a hybrid charge pump structure, this high voltage generator benefits advantages of two charge pumps used and allows obtaining an output voltage that neither of the two charges pumps can reach individually. Simulation results show that an output voltage as high as 41V, which is inferior to the breakdown volt...