This paper describes a successful strategy for measuring the power dissipated by high-voltage, low-capacitance ceramic chip capacitors at frequencies typical of switch-mode power supplies. For these devices, the simpler techniques employed to measure the power dissipation of highcapacitance tantalum and aluminum devices prove inadequate, and a more fundamental approach is required. The various ...

We report the capacitance-voltage (C-V) measurements on thin-film transistors (TFTs) using solution-processed semiconducting carbon nanotube networks with different densities and channel lengths. From the measured C-V characteristics, gate capacitance and field-effect mobility (up to ~50 cm(2) V(-1) s(-1)) of the TFTs were evaluated with better precision compared with the results obtained from ...

Peripheral events in olfaction involve odorant binding proteins (OBPs) whose role in the recognition of different volatile chemicals is yet unclear. Here we report on the sensitive and quantitative measurement of the weak interactions associated with neutral enantiomers differentially binding to OBPs immobilized through a self-assembled monolayer to the gate of an organic bio-electronic transis...

Differing from the structure of traditional parallel plate capacitive sensor a semi cylindrical capacitive sensor has been introduced in this present work to measure the soil moisture conveniently. Here, the numerical analysis method to evaluate the capacitance from the semi-cylindrical capacitive sensor is analyzed and discussed. The changes of capacitance with the variation of soil moisture o...

This paper represents a MEMS based gyroscope to measure orientation. Silicon-micro-machined gyro is fabricated on the basis of resonators and they use vibrating mechanical element to sense rotation. The vibratory measurement can be done by measuring the change in capacitance with respect to the voltage or force applied in particular axis. Here MEMS based gyroscope has been designed from Lame mo...

n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces a...