نتایج جستجو برای: carbon nanotube field effect transistor

تعداد نتایج: 2573505  

2011
V. Ryzhii M. Ryzhii A. Satou T. Otsuji V. Mitin

Related Articles Plasma treatments to improve metal contacts in graphene field effect transistor J. Appl. Phys. 110, 073305 (2011) Improved negative bias illumination instability of sol-gel gallium zinc tin oxide thin film transistors Appl. Phys. Lett. 99, 152102 (2011) Nonvolatile memory characteristics of organic thin film transistors using poly(2-hydroxyethyl methacrylate)-based polymer mult...

2012
Martin Claus Stefan Blawid Paulius Sakalas Michael Schröter

A time-dependent effective-mass SchrödingerPoisson solver is used to study the frequency dependence of the gate capacitance of a short Schottky-barrier carbon nanotube field-effect transistor (CNTFET). A delayed (re)charging of the channel causes a (non-quasi-static) drop of the gate capacitance for higher frequencies on a characteristic scale, which can be related to the escape time of the car...

Journal: :journal of advances in computer research 0
mehdi bagherizadeh department of computer engineering, science and research branch, islamic azad university, tehran, iran mohammad eshghi faculty of electrical engineering, shahid beheshti university. g.c., tehran, iran

scaling challenges and limitations of conventional silicon transistors have led the designers to apply novel nano-technologies. one of the most promising and possible nano-technologies is cnt (carbon nanotube) based transistors. cnfet have emerged as the more practicable and promising alternative device compared to the other nanotechnologies.  this technology has higher efficiency compared to t...

2005
JING GUO SIYURANGA O. KOSWATTA NEOPHYTOS NEOPHYTOU MARK LUNDSTROM

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experim...

2011
Eugen Czeizler Tuomo Lempiäinen Pekka Orponen

Recent years have witnessed a burst of experimental activity concerning algorithmic self-assembly of nanostructures, motivated at least in part by the potential of this approach as a radically new manufacturing technology. Our specific interest is in the self-assembly of Carbon-Nanotube Field Effect Transistor (CNFET) circuits. Our research is focused on developing a new theoretical foundation ...

2017
Mohd. Ajmal Kafeel Mohammad Zulqarnain Mohd. Hasan

In this paper, a reconfigurable, low power four quadrant memristor and carbon nanotube field effect Transistor (CNFET) based analog multiplier is proposed. The circuit is verified by extensive HSPICE simulations using experimentally verified memristor and Stanford CNFET models that have been calibrated for 90% accuracy at the 32nm technology node. The proposed multiplier has an input range of ±...

Journal: :CoRR 2012
Ishit Makwana Vitrag Sheth

Carbon Nanotube Field Effect Transistor (CNFET) is a promising new technology that overcomes several limitations of traditional silicon integrated circuit technology. In recent years, the potential of CNFET for analog circuit applications has been explored. This paper proposes a novel four quadrant analog multiplier design using CNFETs. The simulation based on 32nm CNFET technology shows that t...

2016
Jinjin Li Yanhui Chu Ka-Di Zhu

With the highly competitive development of communication technologies, modern information manufactures place high importance on the ability to control the transmitted signal using easy miniaturization materials. A controlled and miniaturized optical information device is, therefore, vital for researchers in information and communication fields. Here we propose a controlled signal transport in a...

خوئینی , فرهاد , فرمان, حسین ,

 In this work, we study electronic transport properties of a quasi-one dimensional pure semi-conducting Zigzag Carbon Nanotube (CNT) attached to semi-infinite clean metallic Zigzag CNT leads, taking into account the influence of topological defect in junctions. This structure may behave like a field effect transistor. The calculations are based on the tight-binding model and Green’s function me...

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