Presented method of on-line detection of overloads and short circuits in digital devices and systems is based on inexpensive overload detectors built into integrated circuits. A prototype 0.8 μm CMOS ASIC successfully verifies this method.

This paper presents a very low-power and fully programmable CMOS digital active pixel sensor for uncooled IR fast imaging. The proposed circuit topology includes selfbiasing, built-in input capacitance compensation, predictive A/D conversion and a truly digital I/O interface, all at pixel level. Furthermore, full FPN cancellation is also supplied by the external digital tuning of both offset an...

In this paper, ultra-low-voltage and ultra-lowpower circuit techniques are presented for CMOS RF front-ends. By employing a modified current-reused architecture, the low-noise amplifier (LNA) can operate at a very low supply voltage with microwatt power consumption while maintaining reasonable circuit performance at 2.4 GHz. Using a TSMC 0.18 um CMOS process, from the simulation results, the fu...

Radiation detectors were developed by depositing 20 μm thick hydrogenated amorphous silicon (a-Si:H) sensors directly on top of the so-called aSiHtest integrated circuit. This circuit was designed in a quarter micron CMOS technology as a global test circuit for this novel detector technology. The sensor leakage current turned out to be limiting the performance of the whole detector. Its detaile...

The current mirror is one of the necessary parts in CMOS (Complementary Metal Oxide Semiconductor) analog circuit design. The current mirror can be used as an active element and as a biasing circuit. The circuit structures are supposed to be compatible with low-voltage operating environments to avoid the decrement in system performance caused by the low-voltage low-power designs including reduc...

The integrated circuit design of a switched-capacitor filter for Bluetooth specifications is described. It was based on the optimum allocation of poles and zeros to generate a transfer function with unequal numerator and denominator orders, so that a direct-form structure with reduced number of opamps and low sensitivity to capacitor ratio errors were obtained. It was designed for implementatio...

MOS devices go 3D, new quantum effect devices appear in the research labs. This paper discusses the impact of various innovative device architectures on circuit design. Examples of circuits with FinFETs or Multi-Gate-FETs are shown and their performance is compared with classically scaled CMOS circuits both for digital and analog applications. As an example for novel quantum effect devices beyo...

A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Induct...

This paper analyses two front-end receiver architectures intended for GSM900 use; (i) A direct-conversion receiver, and (ii) a low-IF receiver using a poly-phase filter. The aim is to determine the circuit performance required for GSM operation and to compare this to current state-of-the-art CMOS performance. The analysis shows that direct-conversion receivers fail to meet specifications when b...