Spintronic oscillators are nanodevices that are serious candidates for CMOS integration due to their compactness and easy frequency tunability. For a crystal oscillator to work, there must exist a feedback path with properly What practical circuits do is design such that we have a phase-shift of 180. A double balanced down conversion oscillator mixer using 90 nm CMOS technology is proposed in a...

This paper reports design and fabrication of CMOS temperature sensor circuit using MOSIS 0.25um CMOS technology. The proposed circuit has a temperature coefficient of 13mV/ for °C a wide operating temperature range with a good linearity. This circuit may be applicable to the design of one-chip IC where quartz crystal resonator is mounted on CMOS oscillator chips .

A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration ci...

The scaling of CMOS transistors has driven the tremendous growth of the semiconductor industry for the last four decades. However, most experts are saying CMOS is reaching its limits. This paper discusses the technologies that may postponing the scaling limit and the technologies that may replace CMOS when the limit is reached.

Substantial increase in gate and sub-threshold leakage of complementary metal-oxide-semiconductor (CMOS) devices is making it extremely challenging to achieve energy-efficient designs while continuing their scaling at the same pace as in the past few decades. Designers constantly sacrifice higher levels of performance to limit the ever-increasing leakage power consumption. One possible solution...

Abstract—The Spatially Modulated Light CMOS detector (SML CMOS detector) removes the slow part of the current response of a traditional CMOS photodetector, by using the difference between the signals of an immediate and a deferred detector. This slow part of the current response limits the maximum frequency of a photodetector in the conventional CMOS technology to a few MHz. Experimental eviden...

A monolithic CMOS microelectrode array (MEA) for stimulation and recording of electrogenic cells is presented. The chip features addressability of an arbitrary electrode subset for stimulation, complete on-chip signal conditioning and A/D conversion. The array has been fabricated using an industrial 0.6-μm, 5-V CMOS technology with a 2-mask post-CMOS processing. Measurements from neuronal and c...