Zinc Oxide (ZnO) nanorods and titanium dioxide (TiO2) nanostructures thin films were prepared onto glass substrates by the chemical bath deposition (CBD) method. The ZnO was structured as nanorods (NRs) while TiO2 was formed as nanoflowers plate as confirmed by Field-Emission Scanning Electron Microscope (FESEM) images. The ZnO/Fe3O4 and TiO2/Fe3O4 nanostructures thin films were prepared v...

Transparent thin layers of cobalt-doped ZnO were produced with the pulsed laser deposition method. The cobalt content original solid solution was 20% at. crystallographic structure examined by X-ray diffraction, which showed that fabricated crystallized in wurtzite phase and had a dominant orientation along a-axis. texture coefficient (increasing from F = 0.08 for non-annealed layer to 0.94 ann...

Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60 twinning for the (222) oriented crystals. Sharp intense spots in the SAED p...

The introduction of impurity atoms into semiconducting materials is the primary method for controlling the properties of the semiconductor, such as band gap or electrical conductivity. This practice is routinely performed with bulk semiconductors and, more recently, has been extended to nanoscale semiconductors as well. In particular, II–VI and III–V semiconductors that have been doped with tra...

An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen-doped ZnO nanowires are grown on a ZnO thin fi lm on a silicon substrate by chemical vapor deposition without using any metal catalyst. The p-type behavior is studied by output characteristics and transfer characteristic of the nanowire back-gated fi eld-effect transisto...

RF magnetron sputtering is used on the ceramic targets, each of which contains zinc oxide (ZnO), zinc oxide doped with aluminum (AZO) and zinc oxide doped with gallium (GZO). The electric conduction mechanism of the AZO and GZO films came mainly from the Al and Ga, the oxygen vacancies, Zn interstitial atoms, and Al and/or Ga interstitial atoms. AZO and GZO films achieved higher conduction than...

A heterostructure device consisting of nitrogendoped Mg0.12Zn0.88O and gallium-doped ZnO thin films was grown on c-plane sapphire substrate using RF plasmaassisted molecular beam epitaxy. Current–voltage and photocurrent characteristics indicate the formation of a p–n junction. Random lasing behavior with lasing modes centered at 356 nm was observed. A low-threshold current of 6 mA was determin...

Co-doped ZnO nanoparticles with different Cobalt contents were prepared by direct precipitation method. The materials were characterized by XRD, SEM and TEM techniques. The XRD results indicated that the particle size of pure ZnO and Co-doped ZnO is about 30-45nm. The toxic Cr(VI) in industrial wastewaters can be removed by a reduction from Cr(VI) to Cr(III). The reduction of Cr(VI) to Cr(III) ...

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar...