Materials processing systems, such as the Czochralski crystal growth system, are often characterized by the presence of a number of distinct materials and phases with signiicantly diierent thermophysical and transport properties. They may also contain irregular boundaries, moving interfaces and free surfaces. The understanding of the complex transport phenomena in these systems is of vital impo...

Abstract For the first time, single crystals of undoped lithium tungstate and doped by 1.25% molybdenum were grown low-temperature-gradient Czochralski technique. The standard formation enthalpies, lattices stabilization energies, heat capacity determined in temperature range 320-997 K. lattice enthalpy dependence on Mo content was constructed.

This paper introduces a photoluminescence-based technique for determining the acceptor concentration in silicon wafers by measuring the formation rate of iron-acceptor pairs. This rate is monitored by bandto-band photoluminescence in low injection, the intensity of which is proportional to the carrier lifetime. The technique is demonstrated with an iron-implanted float zone silicon wafer, heavi...