The sensitivity of semiconductor photodetectors is limited by photocarrier recombination during the carrier transport process. We developed a new photoactive material that reduces recombination by physically separating hole and electron charge carriers. This material has a specific detectivity (the ability to detect small signals) of 5 × 10(17) Jones, the highest reported in visible and infrare...

Plasmonic hot-electron devices are attractive candidates for light-energy harvesting and photodetection applications. For solid state devices, the most compact and straightforward architecture is the metal-semiconductor Schottky junction. However convenient, this structure introduces limitations such as the elevated dark current associated to thermionic emission, or constraints for device desig...

Photodetectors (PDs) based on two-dimensional (2D) materials are attracting considerable research interest due to the unique properties of 2D and their tunable spectral response. However, performance is not outstanding enough, compatibility fabrication process with Si-complementary metal oxide semiconductor (CMOS) flow needs evaluation. Here, we report an unprecedented high-performance, air-sta...

Since the successful preparation of monolayer MoS2 phototransistor, two-dimensional (2D) layered materials (2DLMs) have been regarded as one most compelling candidates toward implementation next generation novel optoelectronic devices and systems. However, reported 2DLM photodetectors suffer from specific shortcomings, such low responsivity, large dark current, detectivity, on/off ratio, sluggi...

Far infrared detection is demonstrated in forward biased Ge (out to 240 pm), Si (220 pm) and InGaAs (90 ,um) p-i-n with D* up to 5 x 10” cm Hz < 1/2/W at 4.2 K. For silicon detectors, this is the longest response wavelength ever reported. Estimates for the responsivity and the detectivity for unoptimized commercial samples are provided by comparison with a silicon composite bolometer. The varia...

In the past few years, there has been increasing interest in surface plasmon-polaritons, as a result of the strong near-field enhancement of the electric fields at a metal-dielectric interface. Here we show the first demonstration of a monolithically integrated plasmonic focal plane array (FPA) in the mid-infrared region, using a metal with a two-dimensional hole array on top of an intersubband...

In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8...

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge...