نتایج جستجو برای: device temperature

تعداد نتایج: 1088388  

2009
Jose M. Lazaro Antonio Quintela Jose M. Lopez-Higuera

An optical fiber transducer able to work in high temperature environments is experimentally demonstrated in the laboratory. It is based on a permanent long period grating (LPG) written using a new technique based on a thermo-mechanical approach. Device precision was experimentally checked by means of repetitive thermal cycles between 25 and 950 °C. In addition device stability was assured by ma...

2018
Tino Wagner Fabian Menges Heike Riel Bernd Gotsmann Andreas Stemmer

As electronic devices are downsized, physical processes at the interface to electrodes may dominate and limit device performance. A crucial step towards device optimization is being able to separate such contact effects from intrinsic device properties. Likewise, an increased local temperature due to Joule heating at contacts and the formation of hot spots may put limits on device integration. ...

2016
Jabir Ali Ouassou Angelo Di Bernardo Jason W. A. Robinson Jacob Linder

We demonstrate theoretically all-electric control of the superconducting transition temperature using a device comprised of a conventional superconductor, a ferromagnetic insulator, and semiconducting layers with intrinsic spin-orbit coupling. By using analytical calculations and numerical simulations, we show that the transition temperature of such a device can be controlled by electric gating...

2017
Alexander Cuadrado José Manuel López-Alonso Francisco Javier González Javier Alda

When optical antennas are used as light detectors, temperature changes their spectral response. Using this relation, we determine the spectrum of a light beam from an optical antenna's signal. A numerical evaluation of the temperature-spectral response has been completed with a model for the noise of the device. Using both the response and the noise model, we have established the capabilities o...

2001
Yani Najman Malcolm Pringle Laurent Godin Grahame Oliver

194 NATURE | VOL 410 | 8 MARCH 2001 | www.nature.com ture. The integrated PL also increases with temperature in the same manner as the EL, indicating that the temperature dependence is intrinsic to the recombination, rather than the injection mechanism. The strong temperature quenching of PL and EL in most semiconductors is primarily the result of the strong temperature dependence of the compet...

Journal: :ACS nano 2012
Ya Yang Yusheng Zhou Jyh Ming Wu Zhong Lin Wang

We demonstrated the first application of a pyroelectric nanogenerator as a self-powered sensor (or active sensor) for detecting a change in temperature. The device consists of a single lead zirconate titanate (PZT) micro/nanowire that is placed on a thin glass substrate and bonded at its two ends, and it is packaged by polydimethylsiloxane (PDMS). By using the device to touch a heat source, the...

Journal: :iranian journal of public health 0
kwang rae cho dept. of anesthesiology and pain medicine, busan paik hospital, inje university, busan, south korea. myoung-hun kim dept. of anesthesiology and pain medicine, busan paik hospital, inje university, busan, south korea. myoung jin ko dept. of anesthesiology and pain medicine, haeundae paik hospital, inje university, busan, south korea. jae wook jung dept. of anesthesiology and pain medicine, haeundae paik hospital, inje university, busan, south korea. ki hwa lee dept. of anesthesiology and pain medicine, haeundae paik hospital, inje university, busan, south korea. yei-heum park dept. of anesthesiology and pain medicine, haeundae paik hospital, inje university, busan, south korea.

hypothermia generates potentially severe complications in operating or recovery room. forced air warmer is effective to maintain body temperature. extremely low frequency electromagnetic field (elf-emf) is harmful to human body and mainly produced by electronic equipment including convective air warming system. we investigated elf-emf from convective air warming device on various temperature se...

2004
Prabhakar Bandaru Subal Sahni Eli Yablonovitch Hyung-Jun Kim Ya-Hong Xie

We report on the low temperature growth, by molecular beam epitaxy (375 C) and electron-beam evaporation (300 C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke G...

2012
Kihoon Jang Chenxi Wang Yan Xu Takehiko Kitamori

We developed room-temperature bonding of micro-nanofluidic device using fluorine induced plasma activation method. Fluorine was induced by O2 reactive ion etching (RIE) plasma treatment with Teflon Pieces which increased the bonding strength between fused silica glass substrates. The room-temperature bonded fused silica glass micro-nanofluidic device had high bonding strength as well as could w...

Journal: :Nano letters 2011
Kenneth Maclean Tamar S Mentzel Marc A Kastner

We investigate the effect of electrostatic screening on a nanoscale silicon MOSFET electrometer. We find that screening by the lightly doped p-type substrate, on which the MOSFET is fabricated, significantly affects the sensitivity of the device. We are able to tune the rate and magnitude of the screening effect by varying the temperature and the voltages applied to the device, respectively. We...

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