We propose and demonstrate self-aligned Double Injection Function Thin Film Transistor (DIF-TFT) architecture that mitigates short channel effects in 200 nm on non-scaled insulator (100 SiO 2 ). In this conceptual design, a combination of ohmic-like injection contact high injection-barrier metal...

Abstract In this work, a hetero-gate-oxide charge plasma-based nanowire transistor (HGO-CPNWT) has been proposed, characterized, and comparative analysis with the conventional (CCPNWT) Stack-Gate-Oxide CPNWT (SGO-CPNWT) investigated. The effects of stacking high- κ gate oxide low- beneath segmenting at source side drain have analyzed short channel (SCEs) parameters radio-frequency (RF)/analog f...

In this paper, a two-dimensional analytical model of laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting SiO2 and HfO2 is derived. The illustrates higher drive current better performance against hazardous SCEs HCEs in below 30 nm regime. Parabolic approximation method used here to construct channel potentials ...

In this research work, a Cylindrical Surrounding Double-Gate (CSDG) MOSFET design in stacked-Dual Metal Gate (DMG) architecture has been proposed to incorporate the ability of gate metal variation channel field formation. Further, internal gate's threshold voltage ( V TH1 ) could be reduced compared external TH2 by arranging work-function Double devices. Therefore, device CSDG realized instigat...

In this article, the effects of non-ideal cross-sectional shapes stacked nanosheet FET (NSFET) and with inter-bridge channel (TreeFET) are studied through calibrated 3D TCAD simulations. The impact on electrical characteristics due to insufficient/excessive etch processes investigated in terms inner spacer (IS), (NS) channel, (IB) channel. Simulation results show that geometry material IS have ...

Nanosheet Field Effect Transistor (NSFET) is a viable contender for future scaling in sub-7-nm technology. This paper provides insights into the variations of DC FOMs different geometrical configurations NSFET. In this script, performance 3D GAA NSFET analyzed by varying device's width and thickness. Moreover, gate length scaled from 20 nm to 5 check device suitability continuous logic applicat...

Since at the regime of nanometer, quantum confinement effects are observed and wave nature electrons is more dominant. Therefore, classical approach current formulation in mesoelectonics nanoelectronics results inaccuracy as it does not consider effect, which only applicable for bulk electronic device. For accurate modeling simulation nanoelectronics, device atomic-level mechanical models requi...

The paper illustrates the performance of Tri-Gate (TG) Dual Material (DM) SOI (Silicon on Insulator) Junctionless (JL) FET operating in Junction Accumulation Mode (JAM). An analytical model is developed to evaluate its performance. device also simulated using Silvaco simulator. Both and simulation results are compared found match closely. Quasi 3-D modeling approach adopted here determine surfa...

In this paper, a novel vertically stacked silicon Nanosheet Tunnel Field Effect Transistor (NS-TFET) device scaled to gate length of 12 nm with Contact poly pitch (CPP) 48 is simulated. NS-TFET investigated for its electrostatics characteristics using technology computer-aided design (TCAD) simulator. The inter-band tunneling mechanism P-I-N layout has been incorporated in the nanosheet devices...