217 Abstract—As silicon devices shrink and their density increases, the low dielectric constant materials instead of SiO 2 film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at 300~500 ℃ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant u...

The dielectric and conduction behavior of SrTiO3 thin films deposited on a SrTiO3 single-crystal substrate is studied. Without dc bias, an obvious dielectric ‘‘defect mode’’ in the dielectric loss is observed in the temperature range of ;100–200 K; however, no noticeable corresponding dielectric constant peak is observed. By applying a high dc bias ~>40 kV/cm!, a dielectric constant peak with f...

This paper presents a simple method for determining the dielectric constant of microwave PCB substrates. In the presented method, a bandpass microstrip filter on the PCB substrate with a user-predicted dielectric constant value is designed for a given center frequency, and it is implemented. The simulation results of the designed bandpass filter are obtained by the help of electromagnetic analy...

Almost all properties of grains and seeds depend on moisture content. One of these properties is dielectric constant. Therefore capacitive sensor is used in precision agriculture widely. In this paper, a cylindrical capacitor was used to measure dielectric constant of seed. By measuring the dielectric constant, the moisture content of grains may be predicted. Change in dielectric constant of co...

We report measurements of the frequency-dependent dielectric constant of UO, from 4.2 K to above the phase transition at 30 K. The static dielectric constant of 23.6 at 4.2 K is comparable with accepted values at higher temperatures: it is essentially identical in both phases. The effects of undergoing the transition on the dielectric constant are marginal (about 1 I%) and take place in the tem...

Microwave technology has a potential application in the extraction of zinc from sulphide ores, knowledge of the dielectric properties of these ores plays a major role in the microwave design and simulation for any process. The dielectric properties of zinc sulfide concentrate for two different apparent densities—1.54 and 1.63 g/cm3—have been measured by using the resonance cavity perturbation t...

Polysulfide resins,with trade name of  G4 and G112, with short and long chain lengths respectively, were used as reactive modifiers to toughen epoxy resin. The effects of molecular weights of G4 and G112 on impact resistance, dielectric constant, thermal conductivity as well as decomposition  heat and adhesion properties of toughened epoxy were investigated. The impact strength and the diel...

For evaluating quality of electrical insulation, it is necessary to measure the property of insulators. Dielectric constant and loss tangent (tans) are two important parameters for determining the property of insulator. The measurement of above parameters is normally based on the time- domain and frequency-domain, which is costly and time consuming. In this study a multiple-frequency binary se...

SiO2 coated Fe3O4 submicrometer spherical particles (a conducting core/insulating shell configuration) are fabricated using a hydrothermal method and are loaded at 10 and 20 vol % into a bisphenol E cyanate ester matrix for synthesis of multifunctional composites. The dielectric constant of the resulting composites is found to be enhanced over a wide frequency and temperature range while the lo...

Polyvinylpyrrolidone  /  Nickel  oxide  (PVP/NiO)  dielectrics  were fabricated  with  sol-gel  method  using  0.2  g  of  PVP  at  different working  temperatures  of  80,  150  and  200  ºC.  Structural  properties and surface morphology of the hybrid films were investigated by X- Ray  diffraction  (XRD)  and  Scanning  Electron Microscope  (SEM) respectively. Energy dispersive X-ray spec...