This paper presents a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar t...

   Nowadays, the portable multimedia electronic devices, which employ signal-processing modules, require power aware structures more than ever. For the applications associating with human senses, approximate arithmetic circuits can be considered to improve performance and power efficiency. On the other hand, scaling has led to some limitations in performance of nanoscale circuits. According...

Related Articles Low-temperature pseudo-metal-oxide-semiconductor field-effect transistor measurements on bare silicon-oninsulator wafers Appl. Phys. Lett. 101, 092110 (2012) High output current in vertical polymer space-charge-limited transistor induced by self-assembled monolayer Appl. Phys. Lett. 101, 093307 (2012) Influence of dielectric-dependent interfacial widths on device performance in...

The spin field-effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to...

We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor sDGSOId operated as a velocity modulation transistor sVMTd and as a conventional field effect transistor sFETd. Operated as a VMT, the DGSOI transistor provides switching times shorter than 1 ps regardless of the channel length, with a significant current modula...

We present measurement and analysis techniques that allow the complex magneto-conductivity tensor to be determined from measurements of the complex Faraday (θF) and Kerr (θK) angles. θF and θK are measured in a Ga1−xMnxAs and SrRuO3 films. Thick film transmission and reflection equations are used to convert the complex θF and θK into the complex longitudinal conductivity σxx and the complex tra...

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance ...

Single-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. Single electron transistor [SET] is a new nanoscaled switching device because single-electron transistor retains its scalability even on an atomic scale and besides this; it can control the motion of a single electron. The goal of this pape...

Carbon nanotubes have emerged as the leading candidate of electronic materials used for future nanoscale chemical and molecular sensors. Recently, nanotube field effect transistors (CNFETs) have been exploited as biodetectors of the thyroid hormone, triiodothyronine (T3). Although significant progress has been towards the development of actual nanotube based sensor devices, the next challenge i...

The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still...