The measured photomultiplication and excess noise characteristics of two 4H-SiC p-i-n diodes, with i-region widths of 0.105 μm and 0.285 μm, were modelled using a nonlocal multiplication model to determine the ionization threshold energies and the impact ionization coefficients of 4H-SiC. The modelled ionization coefficients accurately predicted the breakdown voltage of a 0.485 μm p-i-n structu...

link.springer.com/chapter/10.1007%2F978-3-642-37949-9_28#page-1 1/4 Look Inside Get Access Find out how to access preview-only content Quality, Reliability, Security and Robustness in Heterogeneous Networks Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering Volume 115, 2013, pp 325-332 6H-SiC Based Power VJFET and Its Temperature Dependen...

By using the electric-field-induced optical second-harmonic generation (EFISHG), we measured the EFISHG-time (EFISHG-t) characteristics to study pre-electrical breakdown of indium-zinc-oxide (IZO)/ N,N'-di [(1-naphthyl)-N,N'-diphenyl]-(1,1'-biphenyl)4,4'-diamine (-NPD)/ tris(8-hydroxy-quinolinato)aluminum(III) (Alq3)/Al organic light-emitting diodes (OLEDs). A series of EFISHG pulses were iden...

We fabricated high standoff voltage ~450 V! Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a curr...

Didactic heuristic arguments, based on the quantum mechanics of the vacuum and the structure of spacetime, are reviewed concerning particle creation from the vacuum by an electric field, vacuum radiation in an accelerated frame, black-hole radiation, minimum mass black holes, spacetime breakdown, maximal proper acceleration, the spacetime tangent bundle, and intrinsic Planck-scale regularizatio...

A design methodology for the edge termination is proposed to achieve the same breakdown voltage of the non-uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) cell structure. A simple analytical solution for the effect of charge imbalance on the termination region is suggested, and it is satisfied with the simulation of potential distribution. The dopi...