Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performan...

A new concept for the manipulation of superparamagnetic beads inside a microfluidic chip is presented in this paper. The concept allows for bead actuation orthogonal to the flow direction inside a microchannel. Basic manipulation functionalities were studied by means of finite element simulations and results were oval-shaped steady state oscillations with bead velocities up to 500 μm/s. The wid...

We have developed an electroformed copper lining having highly clean and smooth surface (i.e. little outgassing and high conductive copper) for use in accelerator components. The copper lining is produced by periodic current reversal electroforming with a low copper-content acid copper sulfate bath containing the specified amount of chloride ions (PR process). Deposit by PR process has the same...

A hard, low-wear probe for contact-mode writing techniques, such as dip-pen nanolithography (DPN), was fabricated using ultrananocrystalline diamond (UNCD). Molding within anisotropically etched and oxidized pyramidal pits in silicon was used to obtain diamond tips with radii down to 30 nm through growth of UNCD films followed by selective etching of the silicon template substrate. The probes w...

Transition metal-oxide resistive random access memory (RRAM) devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming switching voltages and low yields. Engineering of the active layer by doping or addition of thin oxide...

Fig. S1. Enlarged version of Fig. 1, the structure and electrical characteristics of our devices. (a) Device schematic showing our individually patterned TiN/SiOx/TiN devices on a SiO2/p-­‐Si substrate. (b) Typical switching characteristics for our metal-­‐insulator-­‐ metal devices. Following an electroforming sweep (1), the device may be reset (2) and set (3) repeatedly to cycle between 'on' ...

This paper reports an abnormal coexistence of different resistive switching behaviors including unipolar (URS), bipolar (BRS), and threshold switching (TRS) in an Al/NiO/indium tin oxide (ITO) structure fabricated by chemical solution deposition. The switching behaviors have been strongly dependent on compliance current (CC) and switching processes. It shows reproducible URS and BRS after elect...