In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also by using Sentaurus TCAD from Synopsys. Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN spacer have been considered and the GaN cap layer and AlN spacer are found taking important role...

High quality low leakage SINIS devices made of Al-AlMn-Al layers were fabricated for energy dispersive single photon detection. Information on different heat flow channels was extracted from the measured dynamics of detector signals due to X-ray events. At the optimum operation point, the extracted effective electron temperature decreased from 88mK down to 43mK due to self-cooling, roughly doub...

A low effective oxide thickness of 1.45 nm was achieved in HfAlO films deposited by an electron beam gun evaporator on unheated p-Si substrate. A reduction of the leakage current density from 1 · 10 4 to 4.5 · 10 7 A/cm, at an electric field 3 MV/cm, with annealing temperature and a breakdown electric field of 10 MV/cm were demonstrated for ultra thin films. 2004 Elsevier Ltd. All rights reserved.

An increasing integration of nanoscale sensors is being observed in BioSensing and Biomimetic systems. Power consumption is deemed a major limiter as the complexity of integration increases. Supply voltage based scaling using CMOS is also a challenge due to increasing leakage currents. This work presents alternative devices – Interband Tunnel Field Effect Transistors (TFETs) and Split-Gate Quan...

GaN based electronic devices have progressed rapidly over the past decades and are nowadays starting to replace Si and classical III-V semiconductors in power electronics systems and high power RF amplifiers. AlGaN/GaN heterostructures have been, until recently, the materials system of choice for nitride based electronics. The limits of AlGaN/GaN technologies are now known and alternative route...

This study examined the effect of electronbeam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from 4.0×10 -4 A, 6.5×10 -5 A, 2.7×10 -8 A to 7.7×10 -5 A, 7.7×10 -6 A, 4.7×10 -9 A, respectively, at a drain volta...

Quantum-dot spin qubits characteristically use oscillating magnetic or electric fields, or quasi-static Zeeman field gradients, to realize full qubit control. For the case of three confined electrons, exchange interaction between two pairs allows qubit rotation around two axes, hence full control, using only electrostatic gates. Here, we report initialization, full control, and single-shot read...

Temperature dependencies of the threshold current, device slope efficiency, and heterobarrier electron leakage current from the active region of InGaAsP–InP multiquantum-well (MQW) lasers with different profiles of acceptor doping were measured. We demonstrate that the temperature sensitivity of the device characteristics depends on the profile of p-doping, and that the variance in the temperat...

Age-associated rises in oxidative damage are assumed to be a central phenomenon of aging. Their attenuation is an aim for both healthy aging and life extension. This review intends to critically discuss the potential of anti-oxidant actions, but even more to direct the attention to the modes of radical avoidance and to regulatory networks involved. Mitochondria seem to play a decisive role in r...

We report detailed current-transport studies of ultrathin Al2O3 dielectrics on GaAs grown by atomic layer deposition (ALD) as a function of film thickness, ambient temperature and electric field. The leakage current in ultrathin Al2O3 on GaAs is comparable to or even lower than that of the state-of-the-art SiO2 on Si, not counting on high dielectric constant for Al2O3. By measuring leakage curr...