The investigation of the vibrational properties of epitaxial silicene and two-dimensional (2D) Si structures on the silver(111) surface aims for a better understanding of the structural differences and of the simplification of the seemingly complex phase diagrams reported over the last years. The spectral signatures of the main silicene phases epitaxially grown on Ag(111) were obtained using in...

This study reports a non-destructive method of measuring the residual strain in the GaN epilayer grown on sapphire substrate by micro-Raman spectroscopy. Operating in confocal mode this method allows a depth-dependent measurement of residual strain in the epitaxial layer without prior treatment of the sample. This approach to measurement of residual strain is demonstrated on GaN epitaxial films...

This paper reports on swift heavy ion beam induced epitaxial crystallization of a buried Si3N4 layer. Transmission electron microscopy and selected area diffraction patterns have been used to study the epitaxial growth of the buried Si3N4 layer. We observe good epitaxial crystallization at 150 C and 200 C, respectively for 70 MeV Si and 100 MeV Ag ions at an ion fluence of 1 × 10 ions cm. The f...

We present an introduction to the rapidly growing field of epitaxial graphene on silicon carbide, tracing its development from the original proof-of-concept experiments a decade ago to its present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now being recognized. Whether the ultimate promise of graphene-based electronics will ever be realized remain...

Titanium and vanadium dioxide systems were selected to study the MOCVD process for the growth of oxide epitaxial films. Single-crystal Ti02 and V02 films in single and multilayered configurations have been successfully grown on sapphire (a-Al203) single-crystal substrates. Seven distinct epitaxial orientation relationships between the films and the substrates were observed. Discussion on these ...

Graphene is an intriguing material in view of its unique Dirac quasi-particles, and the manipulation of its electronic structure is important in material design and applications. Here, we theoretically investigate the electronic band structure of epitaxial graphene on SiC with intercalation of rare earth metal ions (e.g., Yb and Dy) using first-principles calculations. The intercalation can be ...

A selective epitaxial fabrication method to form piezoresistors on the sidewalls of microfabricated cantilevers for in-plane force sensing applications and their preliminary characterisation results is reported. The piezoresistors were made of a doped silicon epitaxial layer using a selective deposition technique by tailoring the process conditions. Silicon oxide was used as a mask, dichlorosil...

Twinning, polytypism, and polarity are important aspects in nanostructural growth since their presence can affect various properties of the as-grown products. The morphology of nanostructures grown via van der Waals epitaxy is shown to be strongly infl uenced by the twinning density and the presence of polytypism within the nanostructures, while the growth direction is driven by the compound po...

The present status of a new epitaxial growth method, named molecular beam allotaxy (MBA), is reviewed. The method allows one to grow single-crystalline heterostructures in a new way; that is, the desired layer forms during annealing of a precipitate layer. The precipitates are embedded within a single-crystalline matrix, grown by molecular beam epitaxy. The key point is that the epitaxial growt...

We report epitaxial growth of compressively strained silicon directly on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was performed in a silane and hydrogen gas mixture at temperatures as low as 150 C. We investigate the effect of hydrogen dilution during the silicon epitaxy on the strain level by high-resolution x-ray diffraction. Additionally, tri...