Scandium nitride ~001! oriented layers have been grown on magnesium oxide ~001! substrates by molecular beam epitaxy using a rf-plasma source and a scandium effusion cell. The Sc/N flux ratio is found to be critical in determining the structural, optical, and electronic properties of the grown epitaxial layers. A distinct transition occurs at the point where the Sc/N flux ratio equals 1, which ...

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matchi...

We have isolated the effect of kinetic energy of depositing species during pulsed laser deposition (PLD) on surface morphology evolution of Ge(001) homoepitaxy at low temperature (100 °C). Using a dual molecular beam epitaxy (MBE)-PLD chamber, we compare morphology evolution from three different growth methods under identical experimental conditions except for the differing nature of the deposi...

One interesting application of epitaxial magnetic thin films is to use them as one of the electrodes in a spin-dependent tunneling junction, in order to use the magnetocrystalline anisotropy to define the required two states of the magnetization. [1] In our preliminary work, we prepared epitaxial magnetic films on copper buffer layers grown on silicon substrates. [2] The single crystalline qual...

Non- and semipolar GaN have great potential to improve the efficiency of light emitting devices due to much reduced internal electric fields. However, heteroepitaxial GaN growth in these crystal orientations suffers from very high dislocation and stacking faults densities. Here, we report a facile method to obtain low defect density non- and semipolar heteroepitaxial GaN via selective area epit...

Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable...

In this article, we analyze the kinetics of heteroepitaxial growth of GaP on Si~100! by pulsed chemical beam epitaxy on the basis of results obtained by real-time optical process monitoring. In view of the large barrier to epitaxial growth on oxygen or carbon contaminated silicon surface elements and the low stacking fault energy for GaP, residual contamination of the silicon surface contribute...

Conditions for Reciprocal CVD Figure S1. Conditions used for graphene growth. (a) Temperature profile and flow parameters during the growth of epitaxial multilayer or poly-crystalline bilayer graphene. (b) Table listing the growth conditions used to prepare the graphene/h-BN heterostructure and the multilayer graphene.

The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanatio...

We investigate the kinetics of submonolayer epitaxial growth which is driven by a fixed flux of monomers onto a substrate. Adatoms diffuse on the surface, leading to irreversible aggregation of islands. We also account for the effective diffusion of islands, which originates from hopping processes of their constituent adatoms, on the kinetics. When the diffusivity of an island of mass k scales ...