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<span>This paper studies the impact of fin width channel on temperature and electrical characteristics field-effect transistor (FinFET). The simulation tool multi-gate field effect (MuGFET) has been used to examine FinFET characteristics. Transfer with various temperatures (W<sub>F</sub>=5, 10, 20, 40, 80 nm) are at first simulated in this study. results show that increasing e...

The effect of gate – drain/source underlap ( Lun ) on a narrow band LNA performance has been studied , in 30 nm FinFET using device and mixed mode simulations. Studies are done by maintaining and not maintaining the leakage current (Ioff) of the various devices. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain and noise-figure have been used...

Using TCAD modeling, the effect of changing FinFET structure parameters, such as gate stack layer sizes, rib shape, or doping levels, on electrical characteristics device is investigated.

In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to structural aspect through comparison two devices. Similar n-type devices, NW-FETs are less affected than FinFETs by TID effect. For inverter circuit simulation, both n- p-types NW-FET were regarding The operation considering was verified using Berkeley short-ch...

Abstract Semiconductor qubits have garnered attention in the field of device physics. Owing to limited coherence electrons and holes, smaller more compact are desirable. This requirement is aligned with miniaturization conventional transistors. In this study, we consider a spin qubit based on FinFET (Fin Field-Effect Transistor) by using SPICE (Simulation Program Integrated Circuit Emphasis) si...