As a result of their large band gap (~3.4 eV) and high breakdown electric field (>3x106 V/cm), GaN-based devices can operate at voltages higher than 100 V. Also, due to the strong piezoelectric effect and spontaneous polarization of both GaN and AlN, a high sheet carrier density (~1013 cm-2) can be achieved at the AlGaN/GaN heterointerface without any doping. In addition, high electron mobility...

Articles you may be interested in Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence J. Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN Appl. Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN Carrier relaxation ...

This study reports a non-destructive method of measuring the residual strain in the GaN epilayer grown on sapphire substrate by micro-Raman spectroscopy. Operating in confocal mode this method allows a depth-dependent measurement of residual strain in the epitaxial layer without prior treatment of the sample. This approach to measurement of residual strain is demonstrated on GaN epitaxial films...

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward v...

We have studied the effects of rapid thermal annealing at 1300 °C on GaN epilayers grown on AlN buffered Si 111 and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal...

GaN-based Negative Differential Resistance (NDR) diode oscillators have been studied by employing Gunn design criteria applicable to this material system. Numerical simulations were used to carry out large-signal analysis of the GaN NDR diode oscillators in order to evaluate their potential for THz signal generation. It was found that, due to the higher electron velocity and reduced time consta...

The optoelectronic properties of gallium nitride (GaN) have been well studied for decades, with results being translated to applications in solid state lighting and lasers, thermoelectricity, solar cells, power electronics, etc. However, the mechanical and tribological properties of GaN have been studied and understood far less than its optoelectronic properties. Our research aims to explore th...

GaN was grown on porous silicon (PS) substrates by Metalorganic Vapour Phase Epitaxy at temperature of 1050 8C. An additional AlN buffer layer is used between GaN and PS. The crystalline quality and surface morphology of GaN films were studied by X-ray diffraction and scanning electron microscope (SEM), respectively. Preferential growth of hexagonal GaN with h00.1i direction is observed and is ...

We report a general approach for the synthesis of large-scale gallium nitride (GaN) nanostructures by the graphene oxide (GO) assisted chemical vapor deposition (CVD) method. A modulation effect of GaN nanostructures on cell adhesion has been observed. The morphology of the GaN surface can be controlled by GO concentrations. This approach, which is based on the predictable choice of the ratio o...

Interface modification by inserting an ultrathin low-temperature GaN layer prior to the growth of high-temperature GaN barriers followed by an annealing process was employed to improve the properties of the InGaN/GaN quantum wells. By detailed studies and comparisons of the surface morphology, photoluminescence and the surface compositions of the InGaN/GaN quantum wells at different growth stag...