نتایج جستجو برای: gate insulator
تعداد نتایج: 59368 فیلتر نتایج به سال:
Three-dimensional topological insulator (3D TI) nanowires display various interesting magnetotransport properties that can be attributed to their spin-momentum-locked surface states such as quasiballistic transport and Aharonov-Bohm oscillations. Here, we focus on the of a 3D TI nanowire with gated section forms an electronic Fabry-P\'erot (FP) interferometer tuned act surface-state filter or e...
The realization of single-molecule electronic devices, in which a nanometer-scale molecule is connected to macroscopic leads, requires the reproducible production of highly ordered nanoscale gaps in which a molecule of interest is electrostatically coupled to nearby gate electrodes. Understanding how the moleculegate coupling depends on key parameters is crucial for the development of high-perf...
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transport measurements on thin (<100 nm) Bi2Se3 devices and show that the density of the surface states can be modulated via th...
The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in single-layer graphene. Using spin pumping from an yttr...
The positive gate-bias temperature stress (PBTS)-induced instability in top gate self-aligned coplanar InGaZnO thin-film transistors is experimentally decomposed into contributions of distinct mechanisms by combining the stress-time-divided measurements and the extraction of subgap density-of-states (DOS) from the optical response of C-V characteristics. It is found that a total threshold volta...
InAlAs/n+-InGaAs HFET’s have demonstrated a high breakdown voltage in spite of their narrow channel bandgap. In order to understand this unique feature, we have canied out a systematic study in a range of temperatures around room-temperature. We find that for HFET’s with L ~ = 1 . 9 pm, breakdown is drain-gate limited and is a two-step process. First, electrons are emitted from the gate to the ...
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