This paper proposes the Asymmetric Double Gate Silicon Substrate HEMT (ADG-Si-HEMT) to study carrier concentration and intrinsic small signal parameters of InSb/AlInSb silicon wafer DG-HEMT device. The HEMTs work as a three-port system device is named when top bottom gates are biased with different gate voltages. position quasi-Fermi energy levels (Ef) used investigate modulation back-channel c...

Voltage-tunable plasmon resonances in a InGaAs/InP high electron mobility transistor (HEMT) are reported. The gate contact consisted of a 0.5 micron period metal grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the range 10 – 50 cm. The resonance frequency red-shifts with increasing negative gate bias as expected. Phot...

The basic active and passive elements for a 50 nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been realized. The design and fabrication of 50 nm gate length InP HEMTs, MIM capacitors and thin film resistors have been studied. The integration of the components in a microstrip-based MMIC process has been proven by the successful demonstration of a wideband amplifier.

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We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoe...

Voltage-tunable plasmon resonances in the two-dimensional electron gas 2DEG of a high electron mobility transistor HEMT fabricated from the InGaAs/InP materials system are reported. The device was fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography and a semitransparent gate contact that consisted of a 0.5 m period transmission grating...

In response to the requests received since 2006 from overseas Tier 1 manufacturers (primary corporations that directly supply parts to automobile manufacturers), Mitsubishi Electric developed the MGF4941CL and the MGF4841CL discrete high electron mobility transistor (HEMT) amplifiers employing GaAs, and commenced their mass production in 2014. These amplifiers constitute the core of the circuit...

Based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing (RTA), enhancement mode (E-mode) AlGaN/GaN HEMTs with low on-resistance and low knee-voltage were fabricated. The fabricated E-mode AlGaN/GaN HEMT with 1 μm-long gate exhibits a threshold voltage of 0.9 V, a kneevoltage of 2.2 V, a maximum drain current density of 310 mA/mm, a pe...

A dependable and robust technique for nanomachining is ion implantation. In this work, hydrogen (H) implantation was used, the first time, to passivate p-GaN, except gate area, in order create a normally off p-GaN/AlGaN/GaN high-electron-mobility transistor (HEMT). Ion passivation reduces H diffusion allowing it withstand temperatures above 350 °C. Through experiments analyses, energy dosage re...

Most microwave readout architectures in quantum computing or sensing rely on a semiconductor amplifier at 4 K, typically high-electron mobility transistor (HEMT). Despite its remarkable noise performance, conventional HEMT dissipates several milliwatts of power, posing practical challenge to scale up the number qubits sensors addressed these architectures. As an alternative, we present amplific...