A silicon nanocrystals (Si-ncs) conjugated-polymer-based bulk-heterojunction represents a promising approach for low-cost hybrid solar cells. In this contribution, the bulk-heterojunction is based on Si-ncs prepared by electrochemical etching and poly(3-hexylthiophene) (P3HT) polymer. Photoelectric properties in parallel and vertical device-like configuration were investigated. Electronic inter...

We have fabricated inverted heterojunction solar cell devices incorporating [6,6]-phenyl-C(61)-butyric acid methyl ester/poly(3-hexylthiophene) core/shell nanorod arrays by using an anodic alumina oxide template. The internal quantum efficiencies and external quantum efficiencies of these core/shell nanorod inverted solar cells were higher than those of the corresponding conventional inverted b...

In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of th...

The use of non-fullerene acceptors in organic photovoltaic (OPV) devices could lead to enhanced efficiencies due to increased open-circuit voltage (VOC) and improved absorption of solar light. Here we systematically investigate planar heterojunction devices comprising peripherally substituted subphthalocyanines as acceptors and correlate the device performance with the heterojunction energetics...

In this work interdigitated heterojunction photovoltaic devices were manufactured. A donor layer of P3HT nanopillars was fabricated by soft nanoimprinting using nanoporous anodic alumina templates. Subsequently, the PC70BM acceptor layer was deposited by spin coating on top of the P3HT nanopillars using a solvent that would not dissolve any of the previous material. Anisole solvent was used bec...

The effect of an Al metal intralayer on the ZnSe-Ge heterojunction band offset has been theoretically analysed using a consistent tight-binding calculation. In our analysis we show: (i) first, that the heterojunction band offset is basically modified by the first metal monolayer deposited at the interface; (ii) the changes in the band-offset are mainly due to the modifications introduced in the...

A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube-silicon (CNT-Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, de...

ZnO nanoneedle arrays were grown vertically on a fluorine-doped tin oxide-coated glass by hydrothermal method at a relatively low temperature. A self-powered photoelectrochemical cell-type UV detector was fabricated using the ZnO nanoneedles as the active photoanode and H2O as the electrolyte. This solid-liquid heterojunction offers an enlarged ZnO/water contact area and a direct pathway for el...

We compare the energy gap of the ν = 5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation-doped quantum-well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long-range and short-range disorders play in the 5/2 state and observe that the lo...

In this paper, we present a simple empirical model for calculating gain and excess noise in heterojunction GaAs/AlξGa1−ξAs APDs (0.3 ≤ ξ ≤ 0.6), without going through the relatively complicated and time consuming Monte Carlo simulation, commonly used for such devices. In this model, we present a set of empirical formula which can predict a distribution function for ionization path length for a ...