Voltage-tunable plasmon resonances in a InGaAs/InP high electron mobility transistor (HEMT) are reported. The gate contact consisted of a 0.5 micron period metal grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the range 10 – 50 cm. The resonance frequency red-shifts with increasing negative gate bias as expected. Phot...

In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model based physics trapping and detrapping electrons in at nitrogen-site acceptor trap (denoted here as C <sub xmlns:mml="h...

Ever since Gallium Nitride based high electron mobility transistor (HEMT) operation was demonstrated (Khan, 1993), there is a tremendous interest in the design and growth of GaN based transistors for high power device applications. The nitride semiconductors have wide application in the fields of high electron mobility transistors (HEMTs), light emitting diodes, and various high power electroni...

We report a chemically conjugated bilayer graphene field effect transistor demonstrating a high on/off ratio without significant degradation of the on-current and mobility. This was realized by introducing environmentally stable benzyl viologen as an electron-donating group and atmospheric dopants as an electron-withdrawing group, which were used as dopants for the bottom and top of the bilayer...

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1-xN}/AlN, (b) Thin-GaN/3 × {AlxGa1-xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross...

Graphene has amazing abilities due to its unique band structure characteristics de‐ fining its enhanced electrical capabilities for a material with the highest characteris‐ tic mobility known to exist at room temperature. The high mobility of graphene occurs due to electron delocalization and weak electron–phonon interaction, mak‐ ing graphene an ideal material for electrical applications requi...

graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. high mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. one of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (gfet). this review selectively su...

We study the concept of double-heterostructure quantum well (DHQW) InAlN/GaN/AlGaN high electron mobility transistor (HEMT) for higher device robustness and less degradation. Physics-based device simulation proves that the back barrier blocks the carrier injection into the device buffer. However, the energy of the injected electrons in the buffer is higher for any quantum well design in InAlN/G...

The gate-drain capacitance and the sourcedrain capacitance of High Electron Mobility transistors have been measured on a computer-aided measurement system. The variation of these capacitances with transistor bias voltages is explained and compared with the trend predicted by a capacitance model used in literature. Differences in measured and calculated results arise from the assumptions used in...