Suspended semiconductor structures with high thermal isolation provide high temperature sensitivity of the dissipated thermal power. Therefore they can be used to obtain essential information about the underlying mechanisms of anti-Stokes laser cooling. Here, we experimentally investigate the electron-hole pair recombination processes in suspended and non-suspended MQW structures from 77 K up t...

We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a modulation doped GaAs/AlGaAs heterostructure. In this device electrons and holes can be directed to the same area by drain and gate voltages, defining a recombi...

For a GaAs filled metallic hole array on a pre-epi GaAs substrate, the free carriers, generated by three-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave (SPW) resonance, and the related second harmonic (SH) spectrum blue shifts...

This work presents positive experimental evidence for the hole traps in ZnO nanorods, which take part in recombination and change the thermal quenching of Cu-related green emission. The evolution of Cu impurity upon annealing, as well as the formation of Cu-related shallow donors with an energy level of ∼0.11 eV are also indicated by temperature-dependent photoluminescence.

Abnormal increase of low frequency flicker noise in analog nMOSFETs with gate oxide in valence band tunneling domain is investigated. In 15Å oxide devices, valence-band electron tunneling from Si substrate to poly-gate occurs at a positive gate voltage and results in the splitting of electron and hole quasi Fermi-levels in the channel. The excess low frequency noise is attributed to electron an...

Efficient electroluminescence with power efficiency up to 0.12% is observed from silicon pn diodes prepared by boron implantation with boron concentrations above the solubility limit at the postimplantation annealing temperature. The electroluminescence spectra exhibit a transition from two bound-exciton bands towards the free electron-hole pair recombination with an anomalous increase in the t...

The optical properties of graphene quantum dots (GQDs) were investigated theoretically. We focused on the photoinduced charge transfer and electron-hole coherence of single-layer graphene in the electronic transitions in the visible regions. Surface functionalization with donor or acceptor groups produced a red shift in the absorption spectrum, and electrons and holes were highly delocalized. T...

TiO(2) microspheres constructed by well-crystallized faceted nanorods with high aspect ratios expose 100% photocatalytic reactive {111} facets on the spherical surface. The microspheres demonstrated excellent photocatalytic antibacterial activity towards Staphylococcus aureus due to effective suppression of photoinduced electron-hole pair recombination and active TiO(2)@˙OH core-shell structure.

Spontaneous polarization is shown to enhance the lifetimes of photogenerated species in BaTiO3 . This is attributed to polarization-induced surface band bending acting as a thermal barrier to electron/hole recombination. The study indicates that the efficiencies of solar cells and solar fuels devices can be enhanced by the use of ferroelectric materials.

The effective action for string theory which takes into account non-minimal coupling of moduli admits multi-black hole solutions. The euclidean continuation of these solutions can be interpreted as an instanton mediating the splitting and recombination of the throat of extremal magnetically charged black holes.