A near-ideal and homogeneous ?-Ga2O3 Schottky diode with Co contact for a doping level of ?4.2 × 1017 cm?3 in the drift layer where Boltzmann approximation is valid reported. Unlike Si or GaN, thermionic emission shown to be dominant current conduction mechanism at this level. wide depletion region appended large built-in potential observed limit field current, which otherwise evident narrower ...

In this work, a numerical approach has been proposed to estimate the five single-diode circuit model physical parameters of photovoltaic generators from their experimental current-voltage characteristics. Linear least square method used solve system three linear equations express shunt resistance, saturation current and photocurrent as function series resistance ideality factor. Two key points ...

We report the fabrication of p-n+ diamond homojunction through an innovative approach laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top p-type substrate to form homojunction. The current–voltage measurements at room temperature confirmed induced n+ and showed exceptional rectification properties ideality factor 1.07, exce...

In this study, IGZO thin films were deposited on SLG and p-Si wafer at room temperature, under oxygen gas pressure of 5×10-2 7×10-2 mbar, using PLD technique these annealed 300oC temperature. grown in amorphous structure. As the was increased, particle size increased. IGZO/p-Si heterojunction diode produced based film that mbar not annealed, J-V curves darkness illumination condition obtained t...

We have successfully deposited a thin film of rare earth oxide on Si substrate. After morphological characterization via scanning electron microscope and an atomic force microscope, the electrical properties Al/Dy 2 O 3 /Si MOS structure were investigated using current–voltage I(V) capacitance–voltage C(V) measurements, as well study in dynamic regime (AC) conductance–frequency σ( f) measuremen...

Abstract The growth of ZnO nanorods (NRs) have been performed by chemical bath deposition (CBD) method on ITO glass substrate. optical properties along with the structural NRs were studies Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray (EDX), X-Ray Diffraction (XRD), and UV-Visible (UV-Vis) analysis. A 100 nm Cu metal Pd deposited top synthesized via sputtering. el...

We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the...

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in...

In this paper ZnO nanorods and nanodots (with and without a SiO2 buffer layer) were grown on p-Si, forming p–n heterojunctions. The nanorod devices showed no visible electroluminescence (EL) emission but showed rectifying behavior. Covering around 60% of the length of the nanorods with PMMA produced an ideality factor of 3:91 0:11 together with a reverse saturation current of 6:53 4:2 10 8 A. U...

In this paper the performance of an Al0.52In0.48P Ni radioisotope cell is reported over the temperature range -20 °C to 140 °C. A 400 μm diameter p-i-n (2 μm i-layer) Al0.52In0.48P mesa photodiode was used as conversion device in a novel betavoltaic cell. Dark current measurements on the Al0.52In0.48P detector showed that the saturation current increased increasing the temperature, while the id...