Nanoelectronic device properties are usually influenced rather strongly by impurities and atomistic disorder. Examples are electron scattering by dopants in semiconductor nano-wires, spin scattering by disorder in magnetic tunnel junctions, and spin polarized current in dilute magnetic semiconductors. Theoretically, any calculated transport quantity must be averaged over the ensemble of possibl...

Anomalous ion and impurity heating in reversed field pinch plasmas is addressed. Previous work #N. Mattor et al., Comments Plasma Phys. Controlled Fusion 15, 65 !1992"$, which calculated the heating of bulk ions by gyro and Landau resonances with turbulent fluctuations cascading from unstable tearing modes, is extended to impurity species measured in Madison symmetric torus !MST". The heavier m...

We propose a hydrodynamic mechanism, based on the Marangoni flow, to describe growth instabilities of liquid-condensed islands in the supercooled liquid-expanded phase of two-dimensional Langmuir monolayers. This Marangoni instability is intrinsic to Langmuir monolayers and is not controlled by the expulsion of chemical impurities from the liquid-condensed phase. The hydrodynamic transport of t...

We present a detailed study of the high-current transport properties of graphene devices patterned in a four-point configuration. The current tends to saturate as the voltage across graphene is increased but never reaches the complete saturation as in metallic nanotubes. Measurements are compared to a model based on the Boltzmann equation, which includes electron-scattering processes due to cha...

We present a mean-field analysis of a many-body dynamical system which models charge-densitywave transport in the presence of random pinning impurities. Phase slip between charge-density-wave domains is modeled by a coupling term that is periodic in the phase diA'erences. When driven by an external field, the system exhibits a first-order depinning transition, hysteresis, and switching between ...

The continuous scaling of MOSFET devices into the nanoscale regime requires refined models for electron transport. Coulomb interactions must be considered because of two reasons. First the Coulomb force is a long range force implying that both the short and the long range interactions must be included in a particle ensemble. Second the hot-carrier and short-channel effects will have a significa...

We discuss in detail the theoretical basis for the two-band model with spinmixing which has been widely applied to the analysis of the transport properties of ferromagnetic metals. This model is shown to have much more general validity than the original presentation suggested. The model is then applied to resistivity data in Ni and Fe based alloys to obtain a consistent set of parameters for th...

The effect of nonmagnetic impurities and the effective masses on the spindependent transport in a ferromagnet-normal metal-ferromagnet junction is investigated on the basis of a two-band model. Our results show that impurities and the effective masses of electrons in two ferromagnetic electrodes have remarkable effects on the behaviors of the conductance, namely, both affect the oscillating amp...

Graphene nanoribbons with zigzag edges show metallic behavior and are thus considered not appropriate for transistor applications. However, we show that by engineering line defects and using positive substrate impurities one can obtain a suitable effective transport gap at least for analog applications. The transfer and output characteristics of these structures are investigated employing quant...

2.2. Materials 929 2.3. Factors Influencing Charge Mobility 931 2.3.1. Molecular Packing 931 2.3.2. Disorder 932 2.3.3. Temperature 933 2.3.4. Electric Field 934 2.3.5. Impurities 934 2.3.6. Pressure 934 2.3.7. Charge-Carrier Density 934 2.3.8. Size/molecular Weight 935 3. The Charge-Transport Parameters 935 3.1. Electronic Coupling 936 3.1.1. The Energy-Splitting-in-Dimer Method 936 3.1.2. The...