Two classical novae V1493 Aql and V2362 Cyg were known to exhibit unprecedented large-amplitude rebrightening during the late stage of their evolution. We analyzed common properties in these two light curves. We show that these unusual light curves are very well expressed by a combination of power-law decline, omnipresent in fast novae, and exponential brightening. We propose a schematic interp...

platelet adherence surrounding leucocytes in a rosette formation or platelet satellitism is a rare phenomenon. this finding has been observed almost exclusively in ethylenediaminetetraacetic acid treated blood at room temperature. the mechanism underlying this phenomenon is not fully understood. in many reports of platelet satellitism platelets clump to polymorphonuclear neutrophils in healthy ...

The electronic band structures and optical properties of type-II superlattice (T2SL) photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band structure model using the 8-band k · p method to include the conduction and valence band mixing. After solving the 8 × 8 Hamiltonian and deriving explicitly the new momentum matrix elements in terms of envelope function...

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though...

We perform first-principles calculations to explore the physical origin of hydrogen-induced semiconductor surface metallization observed in beta-SiC(001)-3 x 2 surface. We show that the surface metallization arises from a novel mechanism of n-type doping of surface band via formation of hydrogen bridge bonds (i.e., Si-H-Si complex). The hydrogen strengthens the weak Si-Si dimers in the subsurfa...

High-resolution x-ray photoemission spectroscopy, infrared reflectivity and Hall effect measurements, combined with surface space-charge calculations, are used to show that electron accumulation occurs at the surface of undoped single-crystalline In2O3. From a combination of measurements performed on undoped and heavily Sn-doped samples, the charge neutrality level is shown to lie approximately...