NAKAMURA. s.: ‘InGaN/AlGaN blue light emitting diodes’, J. Vac. Sci. Teclznol. A , 1995, 13, (3 ) , pt. I , pp. 705-710 NAKAMURA, S , SENOH, M , NAGAHAMA. S. , IWASA, N., YAMADA, T., MATSUSHITA. I., KIYOKU. H., and SUGIMOTO, Y : ‘InGaN-based multi-quantum-well-structure laser diodes’, Jpn. J. Appl. Pliys., 1996, 35, (le). pp. L74-L76 DMITRIbV, V.A.: ‘GaN based pn structures grown on Sic substra...

BACKGROUND Alexandrite (755 nm) and diode lasers (800-810 nm) are commonly used for hair removal. The alexandrite laser technology is somewhat cumbersome whereas new diode lasers are more robust. Recently, alexandrite-like 755 nm wavelength diodes became available. OBJECTIVES To compare the efficacy, tolerability, and subject satisfaction of a 755 nm diode laser operated in conventional (HR) ...

We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down...

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This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were ascribed to two pathways of the exciton recombination, corresponding to the fast decay and the slow ...

Volume Bragg gratingTM (VBGTM) technology has been shown to improve spectral characteristics of the high-power laser diodes and arrays. We review the recent advances in VBG technology that lead to better spectral performance as well as improvements in spatial brightness of the high-power laser diode arrays. The VBG technology has been applied to manufacturing of high-power laser diode arrays su...

6 Conclusion 23 Acknowledgments 23 Abbreviations and Acronyms 23 Related Articles 24 References 24 Modern diode laser spectroscopy is becoming an important and a more widely used tool for detection and measurement of trace gases. The change is driven by the recent advances in diode laser technology and diode laser frequency conversion techniques, which now push the limits of emission wavelength...

The monolithic integration structure of the AlGaN/InGaN/GaN−based high electron mobility transistor (HEMT) and light−emitting diode (LED) is attractive in LED lighting visible light communication (VLC) systems owing to reduction parasitic elements by removing metal interconnections. Due band−offset polarization effect, inserting a certain thickness InGaN layer into traditional AlGaN/GaN single ...

AIM To evaluate chemically the effects of diode laser on fluoride uptake before and after laser irradiation of enamel surfaces. METHODS Crowns of 20 sound human teeth were halved and a 3 x 3 mm acid-resistant varnish uncovered window left for: A) no treatment; B) fluoride (Elmex gel); C) diode (fluoride + diode laser); D) diode (diode laser + fluoride). The dental surfaces were analysed using...