This paper is based on analysis of a common source - common gate low noise transconductance amplifier (CS-CG LNTA). Conventional noise analyses equations are modified by considering to the low output impedance of the sub-micron transistors and also, parasitic gate-source capacitance. The calculated equations are more accurate than calculated equations in other works. Also, analyses show that th...

The fabrication and measurements of solution-processed vertically stacked complementary organic field-effect transistors (FETs) with a high static noise margin (SNM) are reported. In the device structure, a bottom-gate p-type organic FET (PFET) is vertically integrated on a top-gate n-type organic FET (NFET) with the gate shared in-between. A new strategy has been proposed to maximize the SNM b...

We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, gm, of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, Ion/Ioff, is up to 100. Moreover, the output properties of the gra...

With the rapid development of wide-band gap semiconductor chip and package technologies, voltage class commercial silicon carbide (SiC) device is gradually improved. This paper concentrates on latest 3.3-kV full SiC-based metal oxide field-effect transistor (MOSFET) its application in railway traction. First, compared with Si-based insulated-gate bipolar (IGBT), MOSFET shows lower switching los...

The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...

0038-1101/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.sse.2012.05.061 ⇑ Corresponding author. E-mail address: [email protected] (J. Wan). We experimentally demonstrate a field-effect transistor with a single front gate built on fully-depleted silicon-on-insulator substrate that possesses extremely steep switching slope ( 1 mV/decade) and gate-controllable hysteresis. ...

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The cumulative inverter losses and power consumption of a silicon insulated gate bipolar transistor (Si IGBT) three types carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were evaluated on an electric motor test bench under worldwide harmonized light vehicles cycle (WLTC). SiC MOSFETs showed higher performance than Si IGBT regardless the type vehicles. In case driving in...

This paper includes modeling and simulation of 180 MW units of pumped storage power plant with Variable speed machines. In this method, voltage source inverters are used instead of traditional cyclo-converters. This paper aims to control the voltage source inverters and maintain DC voltage at a constant value. AC/ DC/ AC converter is used in system configuration structure in order to control an...