We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structu...

Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer o...

CoO/Al-doped ZnO (AZO) multilayers exhibit ferromagnetism up to ~300 K. The magnetic behavior oscillates with odd vs even number of Co layers in the insulating antiferromagnetic CoO and (separately) with the thickness of the AZO layers and vanishes if AZO is replaced by intrinsic ZnO. Magnetization is due to uncompensated (111) ferromagnetic planes of insulating CoO for odd numbers of atomic pl...

The search for nonvolatile memory concepts has a massive impact on the development of nanoscopic systems with adjustable electrical properties. Capacitor-like structures composed of insulating materials sandwiched between metallic electrodes are envisioned to overcome the limitations associated with conventional charge storage devices and may open the road to neuromorphic computing. Together wi...

Josephson [8] predicted in 1962 that a DC tunnel current would flow between two superconductors connected by a thin insulating layer of thickness less than about 20 Å in the absence of a voltage difference, an effect now called the DC Josephson effect. The quantum-mechanical current, called the superconducting current, arises from the tunneling of Cooper pairs of electrons of opposite spin and ...

We present a general introduction to the non-zero temperature dynamic and transport properties of low-dimensional systems near a quantum phase transition. Basic results are reviewed in the context of experiments on the spin-ladder compounds, insulating two-dimensional antiferromagnets, and double-layer quantum Hall systems. Recent large N computations on an extended t-J model (cond-mat/9906104)...

We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 microm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise cons...

A paper actuator was fabricated from poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) by a wet process without organic solvents. The paper actuator had a capacitor structure, with a cationic polymer as an insulating layer sandwiched between two PEDOT:PSS films as the electrodes. The thickness of the paper actuator was approximately 36 m. We measured its displace...

Static secondary ion mass spectrometry was used to study the corrosion inhibitor Irgamet®39 on the surface of copper treated in insulating oils and the effect of temperature changes, by means of temperature programmed desorption experiments under vacuum, on metal coverage. Four commercial oils, both corrosive and noncorrosive, showed no significant influence on the stability of the tolyltriazol...

The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approximately 10,000 cm2 V(-1) s(-1)). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means ...