Ion-sensitive field effect transistor (ISFET) sensor is a hot topic these years, playing the combined roles of signal recognizer and converter for (bio)chemical analytes. In this review article, basic concept, origination, history ISFET are presented. addition, common fabrication processes, most-used working principle (potentiometric, amperometric, impedancemetric), techniques gate functionalit...

A pH sensor fabricated on a single chip by an unmodified, commercial 0.6m CMOS process is presented. The sensor comprises a circuit for making differential measurements between an ion-sensitive field-effect transistor (ISFET) and a reference FET (REFET). The ISFET has a floating-gate structure and uses the silicon nitride passivation layer as a pH-sensitive insulator. As fabricated, it has a la...

Acid or base concentrations can be determmed very rapidly by performmg an acid-base titration with coulometncally generated OHor H+ ions at a noble metal actuator electrode m close proximity to the pH-sensitive gate of an ion-sensitive field effect transistor (ISFET) The ISFET is used as the mdicator electrode to detect the eqmvalence point in the titration curve Typical values for the time nee...

multiplier is one of the important components in many systems such as digital filters, digital processors and data encryption. improving the speed and area of multipliers have impact on the performance of larger arithmetic circuits that are part of them. wallace algorithm is one of the most famous architectures that uses a tree of half adders and full adders to increase the speed and reduce the...

Silicon nanowire field effect transistors (SiNW-FETs) have shown great promise as biosensors in highly sensitive, selective, real-time and label-free measurements. While applications of SiNW-FETs for detection of biological species have been described in several publications, less attention has been devoted to summarize the conjugating methods involved in linking organic bio-receptors with the ...

in this paper, the temperature dependence of some characteristics of cylindrical gate-all-around si nanowire field effect transistor (gaa-si-nwfet) is investigated to representing the temperature nano-sensor structures and improving their performance. firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of gaa-si-nwfet to propose the temperatu...