Leakage power is the main dominant source of power dissipation for Sub-lOOlJm VLSI circuits. Various techniques were proposed to reduce the leakage power dissipation; one of these techniques is Multi-Threshold voltage. In this paper, the exact and optimal values of Threshold Voltage (Vth) for each transistor of the design are found for any sequential circuit. This is achieved by applying Artifi...

This paper deals with design opportunities of Static Random Access Memory (SRAM) for low power consumption. Initially three major leakage current components are reviewed and then for a 6T SRAM cell, some of the leakage current reduction techniques are discussed. Finally double finger latch is analyzed and compared with single finger latch which shows reduction in sub threshold leakage current.

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

The broadcast nature of wireless communications leads to two concepts: cooperation and secrecy. The basis for both cooperation and the potential lack of secrecy is the over-heard information at the unintended parties, which wireless communication channel provides for free. It is well-established that users can help increase each others’ rates by intelligently using their over-heard information....

This paper concerns two-hop communication over relay-assisted Block fading channel. It is assumed there is not a direct link between the transmitter and the affiliated destination and the communication occurs in two hops through the use of a relay, where the amplify and forward (AF) strategy is employed at this node. In this case, in a Rayleigh block fading channel, the optimal weight function ...

We have fabricated tungsten-diamond-like-nanocomposite (W-DLN) Schottky contacts on n-type and p-type 6H SiC (Si-face). The as-deposited n-type and ptype contacts are rectifying and measurement results suggest that the electrical characteristics are dominated by the properties of the tungsten SiC interface. The n-type contacts have a reverse leakage current density of 4.1 x 10 -3 Acm -2 and the...

: Induction generators are gaining the popularity due to its simplicity and no synchronization problem. However the major drawback of this machine is its additional reactive burden on the system, where it is connected. In this paper an attempt is made to explore the performance of a grid connected induction generator (GCIG) due to weak grid conditions i.e. voltage and frequency fluctuations. It...

This paper proposes a voltage-based hot-spot detection method for photovoltaic (PV) string using the projector. Hot-spots form in solar cells at defects causing a high carrier recombination rate, it appears as a high reverse leakage current of p-n junctions when solar cells are partially shadowed. Using this characteristic, authors previously developed a voltage-based hot-spot detection method ...

Reverse leakage current characteristics of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) with various chip geometries are examined. The effect of chip geometry on the reverse leakage current is negligible at a low voltage, but becomes apparent at a high voltage. The reverse breakdown voltage of LEDs decreases as the angle of vertex in the chip geometry decreases presumably becaus...

Flash ADC is an important component for realization of high speed and low power devices in signal processing system .As technology scale down, leakage current becomes the most concerned factor. This paper reports the power gating technique to provide the reduction mechanism for suppressing the leakage current effectively during standby mode but it introduces ground bounce noise. We designed a “...