A design methodology for wideband CMOS low noise amplifier (LNA) with source degeneration is presented. By allowing an arbitrary source degeneration and employing a general input matching network, the minimum noise figure of the proposed wideband CMOS LNA can be made independent of the transistor width by properly choosing the source degeneration reactance. This result shows that the proposed t...

A low-power, high-gain CMOS low noise amplifier (LNA) for use as the first stage of a subsampling receiver is proposed. The performance of +96-dB voltage gain and less than 1-dB Noise Figure (NF) with very low power consumption is reported for the first time and makes it suitable for subsampling mixer with Track and Hold (T/H) circuit. The LNA contains both tuned and inductorless amplifier stag...

A new approach for designing an ultra wideband (UWB) CMOS low noise amplifier (LNA) is presented. The aim of this design is to achieve a low noise figure, reasonable power gain and low power consumption in 3.1-10.6 GHz. Also, the figure of merit (FOM) is significantly improved at 180nm technology compared to the other state-of-the-art designs. Improved π-network and T-network are used to obt...

The sensitivity of communications systems is limited by noise. Noise figure for low noise amplifier (LNA) design is highly relevant for LNA’s prima-facie function for adding as low as noise to be added to the desired signal amplification when simulated for system level configuration for varied frequencies ranges. In this paper the noise figure was analyzed as performance parameter for C-band fo...

Low Noise Amplifier, CMOS, Noise Canceling, Technique. This paper presents a 0.8V, 3.6GHz narrow band CMOS low noise amplifier (LNA). A current-reused technique is employed to increase the gain of LNA. Also, in order to achieve low noise figure, a noise canceling technique is used in the output stage. The high gain LNA was designed and simulated in 0.13 μm CMOS process. A gain of 27 dB at 3.6GH...

Owing to its well-known properties of possible power-noise match as well as superior noise performance, the inductively-degenerated low-noise amplifier is nowadays the most-widely used RF pre-amplifier topology. However, there is not much flexibility when setting the amplifier’s input impedance to match the source impedance, as for a given biasing condition, matching is achievable only for a pa...

In this paper, we present a 0.7 V low-noise amplifier(LNA) using monolithic transformer feedback to neutralize the gate-drain overlap capacitance of a field-effect transistor(FET). It is a single-ended amplifier implemented in 0.18-μm CMOS technology designing for 5-GHz wireless local-area networks (LANs). This LNA achieves a simulated power gain of 10.84 dB, noise figure(NF) of 2.4 dB, and inp...

A current reused low-noise amplifier (LNA) with gain compensated to extend the bandwidth and is designed for ultra-wideband (UWB) wireless receiver. The design consists of two cascode common-source amplifier and an output buffer which is implemented in 0.18um RF CMOS process. The LNA gives 13.1dB gain; 9.1GHz 3dB bandwidth (3.1-12.2GHz) while consuming 13.9mW through a 1.8V supply. Over the 3.1...

A cascode CMOS low noise amplifier (LNA) is presented along with the used design methodology and measurement results. The LNA works at 2.4 GHz with 14.5 dB voltage gain and 2.8 dB simulated noise figure (NF). Powered from a 1.8 V supply, the core measured current consumption is 2.76 mA. An output buffer was designed to match a 50 Ω load and its current consumption is 5.5 mA. The technology used...

Bluetooth Low Energy (BLE) is an advanced technology that has been designed as complementary technology to classic Bluetooth and also it is the lowest possible power wireless technology that can be designed and built. This paper provides an overview of bluetooth low energy technology and utilization of CMOS Low Noise Amplifier (LNA) for BLE applications. The aim of this paper is review and comp...