SiBCN ceramics were introduced into porous Si₃N₄ ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N₂ atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α...

Low pressure chemical vapor deposition (LPCVD) of Me-Si-N (Me= Re, W, Ta) thin films were investigated for use as diffusion barrier between Cu overlayer and oxidized silicon substrates. Their "amorphous" or nanocrystalline structure is expected to provide better performance than usual polycrystalline barriers. For the CVD process, gaseous precursors were silane, in situ fabricated metal chlorid...

An ultra-deep (40–120 μm) keyhole-free electrical isolation trench with an aspect ratio of more than 20:1 has been fabricated. The process combines DRIE (deep reactive ion etch), LPCVD insulating materials refilling and TMAH or KOH backside etching technologies. Employing multi-step DRIE with optimized etching conditions and a sacrificial polysilicon layer, the keyholes in trenches are prevente...

An attempt was made to deposit a high thermally stable silicon dioxide (SiOZ) film onto InP substrates. The films were grown by rapid thermal, low-pressure chemical vapor deposition (RT-LPCVD), using pure oxygen (0,) and 2% diluted silane (SiH,+) in argon (Ar) gas sources, in the temperature range of 350-550 “C and pressure range of 3-10 Torr. The SiO,/InP structures were heated, post-depositio...

We report in-situ doping of polysilicon grown on glass substrates by a LPCVD process. The growth rate, the resistivity and the dopant concentration of boron in-situ doped polysilicon layers are studied as a function of the deposition pressure and the dopant gas to silane mole ratio. A dependence of the axial uniformity on pressure and B2H6/S1H4 mole ratio is put forward, and this effect appears...

A new method is presented to fabricate out-of-plane microstructures using traditional planar micromachining technology. Composite LPCVD polysilicon/silicon nitride beams are fabricated to study this concept. Polysilicon films ranging from 0.5 μm to 1.3 μm, and silicon nitride films ranging from 150 to 450 nm, were used to fabricate various thickness ratios of composite out-of-plane microstructu...

Macroporous silicon has been etched from n-type Si, using a vertical etching cell where no rear side contact on the silicon wafer is necessary. The resulting macropores have been characterised by means of Scanning Electron Microscopy (SEM). After etching, SiO2 was thermally grown on the top of the porous silicon as an insulating layer and Si3N4 was deposited by means of Low Pressure Chemical Va...

A novel fabrication strategy has produced optical microring-resonator-based thermal detectors. The detectors are based on the thermo-optic effect and are thermally isolated from a silicon wafer substrate so as to maximize the temperature excursion for a given amount of incident radiation and minimize the impact of thermal phonon noise. The combination of high-Q, thermal isolation, and lack of J...