نتایج جستجو برای: magnetron sputtering

تعداد نتایج: 8959  

2010
Y. L. Jeyachandran Sa.K. Narayandass

We report an interesting observation of minimization of bacterial attachment on titanium nitride coatings of increased thickness. DC magnetron sputtering method was used to prepare titanium nitride coatings of different thickness and the attachment of an oral bacteria Porphyromonas gingivalis was studied. With increase in thickness of the coatings the particle size increased and the order of ba...

2012
M. Irimia A. P. Rambu G. Zodieru I. I. Leonte M. Purica F. Iacomi

Gallium doped zinc oxide, GZO, thin films have been deposited onto glass substrate by rf magnetron sputtering at various substrate temperatures. The electrical and optical properties of the thin films have been studied as a function of substrate temperature. X-ray diffraction was used in order to investigate thin film structures. The thin film structure was stabilised by heating the samples in ...

2011
Y. P. Pershyn E. M. Gullikson I. A. Artyukov V. V. Kondratenko V. A. Sevryukova D. L. Voronov E. N. Zubarev A. V. Vinogradov

Impact of Ar gas pressure (1−4 mTorr) on the growth of amorphous interlayers in Mo/Si multilayers deposited by magnetron sputtering was investigated by small-angle x-ray scattering (λ=0.154 nm) and methods of cross-sectional transmission electron microscopy. Some reduction of thickness of the amorphous inter-layers with Ar pressure increase was found, while composition of the layers was enriche...

2004
Julio A. Bragagnolo Bhushan Sopori Tohru Hashimoto Ichiro Sugiyama

Techniques for cost-efficient operation of SiNx:H systems with a capability for hydrogen passivation in a manufacturing environment are analyzed. We conclude that SiNx:H performance may be optimized by a variety of techniques, and that the cost and productivity of the deposition tool may be the determining factors in the industry’s decision for a particular technique. PECVD constitutes the curr...

2010
M Jullien D Horwat J L Endrino R Escobar Galindo Ph Bauer

Aluminium doped zinc oxide thin films (4 at.% Al) were deposited by reactive magnetron sputtering technique and characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), four point probe technique and optical spectrophotometry. High heterogeneities were observed as a function of sample position in the chamber. The chemical analyses did not reveal significant change...

1999
S. Henderson

A thin metallic coating is required on the inside of central detector beryllium beampipes at high-current ee colliders in order to suppress detector backgrounds that arise from scattered synchrotron radiation. As part of two CESR/CLEO upgrades, three beryllium beampipes have been coated with gold using a magnetron sputtering technique. The apparatus will be described as well as the factors that...

2005
Z. G. Yin H. T. Zhang D. M. Goodner M. J. Bedzyk R. P. H. Chang J. B. Ketterson

We present results on the in situ, two-dimensional growth sas opposed to the more commonly encountered island-coalescence mechanismd of continuous epitaxial Cu2O films on MgOs011d using dc facing-magnetron sputtering from metallic Cu targets in an oxygen/argon atmosphere. Film growth was studied as a function of deposition time and the dc power applied to the guns. Control of the latter leads t...

2004
Y. Sakuraba

Nanocrystalline films of La-doped CaB6 have been fabricated by using a rf-magnetron sputtering. Lattice expansion of up to 6% with respect to the bulk value was observed along the direction perpendicular to the film plane, which arises from the trapping of Ar gas into the film. Large ferromagnetic moment of 3 ∼ 4 μB/La has been observed in some La-doped films only when the lattice expansion rat...

2014
Shilei Zhao Chunwang Zhao

Ti-47 at.%Ni alloy films were prepared by magnetron sputtering followed by 460°C for 40 minutes heat-treatment. The strain fields between B2 phase matrix and G.P. zone were mapped by a combination of high-resolution transmission electron microscopy and geometric phase analysis method. It was found that there is a compressive strain region parallel to the longitudinal axis of G.P. zone with 2 nm...

2016
Bin-Hao Chen Hsiu-Hao Hsu David T.W. Lin

We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented ...

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